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New insights into the surface properties of hard-templated ordered mesoporous carbons
Carbon ( IF 10.5 ) Pub Date : 2018-02-01 , DOI: 10.1016/j.carbon.2017.11.049
Xiaoan Li , Farisa Forouzandeh , Tobias Fürstenhaupt , Dustin Banham , Fangxia Feng , Siyu Ye , Daniel Y. Kwok , Viola Birss

Abstract Although hard-templated ordered mesoporous carbons (OMCs) have been widely studied in the past decades, their surface properties, especially surface wettability, have not been investigated in detail. This study shows that as-synthesized hard-templated OMCs (sucrose- and anthracene-derived OMCs, i.e., OMC-S and OMC-A, respectively, formed using the identical hexagonal mesoporous silica template) have very different surface characteristics, with OMC-S being significantly more hydrophobic than OMC-A. This is attributed to the presence of a thin, hydrophobic, microporous carbon shell layer surrounding the mesoporous core of the OMC-S particles, seen here for the first time by transmission electron microscope tomography and confirmed by the slower water uptake and slower electrochemical kinetics of OMC-S vs. OMC-A. At the same time, the mesopores within both OMC-S and OMC-A remain hydrophilic, as shown primarily by water vapor sorption measurements, due to the high density of surface oxygen groups inside the pores, as also confirmed by cyclic voltammetry. These oxygen groups are proposed to have been derived from C O Si bonds that formed at the carbon/silica interface during the carbonization process, leaving C OH groups behind after removal of the silica template. These findings are relevant to a broad range of nanoporous carbon surfaces prepared with hard templates.

中文翻译:

对硬模板化有序介孔碳表面性质的新见解

摘要 虽然硬模板化有序介孔碳(OMCs)在过去几十年中得到了广泛的研究,但其表面性质,尤其是表面润湿性,尚未得到详细研究。该研究表明,合成的硬模板 OMC(蔗糖和蒽衍生的 OMC,即 OMC-S 和 OMC-A,分别使用相同的六方介孔二氧化硅模板形成)具有非常不同的表面特征,OMC- S明显比OMC-A疏水。这归因于 OMC-S 颗粒的介孔核周围存在薄的疏水性微孔碳壳层,这是通过透射电子显微镜断层扫描首次看到的,并通过较慢的吸水率和较慢的电化学动力学证实OMC-S 与 OMC-A。同时,OMC-S 和 OMC-A 中的中孔保持亲水性,这主要通过水蒸气吸附测量显示,因为孔内表面氧基团的密度高,循环伏安法也证实了这一点。提出这些氧基团源自于碳化过程中在碳/二氧化硅界面处形成的 CO Si 键,在去除二氧化硅模板后留下 C OH 基团。这些发现与用硬模板制备的各种纳米多孔碳表面有关。提出这些氧基团源自于碳化过程中在碳/二氧化硅界面处形成的 CO Si 键,在去除二氧化硅模板后留下 C OH 基团。这些发现与用硬模板制备的各种纳米多孔碳表面有关。提出这些氧基团源自于碳化过程中在碳/二氧化硅界面处形成的 CO Si 键,在去除二氧化硅模板后留下 C OH 基团。这些发现与用硬模板制备的各种纳米多孔碳表面有关。
更新日期:2018-02-01
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