For planar structured organic–inorganic hybrid perovskite solar cells (PerSCs) with the poly(3,4-ethylenedioxythiophene:polystyrene sulfonate) (PEDOT:PSS) hole transport layer, the open-circuit voltage (V_oc) of the device is limited to be about 1.0 V, resulting in inferior performance in comparison with TiO₂-based planar counterparts. Therefore, increasing V_oc of the PEDOT:PSS-based planar device is an important way to enhance the efficiency of the PerSCs. Herein, we demonstrate a novel approach for perovskite film formation and the film is formed by slow growth from lead acetate precursor via a one-step spin-coating process without the thermal annealing (TA) process. Because the perovskite layer grows slowly and naturally, high-quality perovskite film can be achieved with larger crystalline particles, less defects, and smoother surface morphology. Ultraviolet absorption, X-ray diffraction, scanning electron microscopy, steady-state fluorescence spectroscopy (photoluminescence), and time-resolved fluorescence spectroscopy are used to clarify the crystallinity, morphology, and internal defects of perovskite thin films. The power conversion efficiency of p–i–n PerSCs based on slow-grown film (16.33%) shows greatly enhanced performance compared to that of the control device based on traditional thermally annealed perovskite film (14.33%). Furthermore, the V_oc of the slow-growing device reaches 1.12 V, which is 0.1 V higher than that of the TA device. These findings indicate that slow growth of the perovskite layer from lead acetate precursor is a promising approach to achieve high-quality perovskite film for high-performance PerSCs.

中文翻译：

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基于醋酸铅前体的慢速生长钙钛矿层的高效平面结构钙钛矿太阳能电池，具有增强的开路电压和抑制的电荷复合作用。

对于具有聚（3,4-乙撑二氧噻吩：聚苯乙烯磺酸盐）（PEDOT：PSS）空穴传输层的平面结构有机-无机混合钙钛矿太阳能电池（PerSCs），设备的开路电压（V _oc）限于大约为1.0V，与基于TiO ₂的平面对应物相比，性能较差。因此，增加V _oc基于PEDOT：PSS的平面设备的制造是提高PerSC效率的重要途径。在这里，我们展示了一种钙钛矿成膜的新方法，该膜是由乙酸铅前体通过一步旋涂工艺缓慢生长而形成的，而无需热退火（TA）工艺。由于钙钛矿层缓慢而自然地生长，因此可以获得具有更大晶体颗粒，更少缺陷和更平滑表面形态的高质量钙钛矿薄膜。紫外线吸收，X射线衍射，扫描电子显微镜，稳态荧光光谱（光致发光）和时间分辨荧光光谱用于阐明钙钛矿薄膜的结晶度，形态和内部缺陷。基于缓慢生长的薄膜的p–i–n PerSC的功率转换效率（16。与基于传统热退火钙钛矿薄膜的控制装置（14.33％）相比，具有33％的性能显示出大大增强的性能。此外，缓慢增长的设备的V _oc达到1.12 V，比TA设备的V _oc高0.1V。这些发现表明，从醋酸铅前体中缓慢生长钙钛矿层是实现高性能PerSCs高质量钙钛矿膜的有前途的方法。