Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS2 Continuous Films,ACS Nano

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Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS2 Continuous Films
ACS Nano ( IF 15.8 ) Pub Date : 2017-11-21 00:00:00 , DOI: 10.1021/acsnano.7b03819
Hua Yu ₁ , Mengzhou Liao ₁ , Wenjuan Zhao ₁ , Guodong Liu ₁ , X. J. Zhou ₁ , Zheng Wei ₁ , Xiaozhi Xu ₂ , Kaihui Liu _{2,

3} , Zonghai Hu _{2,

3} , Ke Deng ₄ , Shuyun Zhou ₄ , Jin-An Shi ₁ , Lin Gu ₁ , Cheng Shen ₁ , Tingting Zhang ₁ , Luojun Du _{1,

5} , Li Xie ₁ , Jianqi Zhu ₁ , Wei Chen ₆ , Rong Yang _{1,

7} , Dongxia Shi _{1,

7} , Guangyu Zhang _{1,

3,

7}

Affiliation

Large scale epitaxial growth and transfer of monolayer MoS₂ has attracted great attention in recent years. Here, we report the wafer-scale epitaxial growth of highly oriented continuous and uniform monolayer MoS₂ films on single-crystalline sapphire wafers by chemical vapor deposition (CVD) method. The epitaxial film is of high quality and stitched by many 0°, 60° domains and 60°-domain boundaries. Moreover, such wafer-scale monolayer MoS₂ films can be transferred and stacked by a simple stamp-transfer process, and the substrate is reusable for subsequent growth. Our progress would facilitate the scalable fabrication of various electronic, valleytronic, and optoelectronic devices for practical applications.

中文翻译：

高取向单层MoS ₂连续膜的晶圆级生长和转移

近年来，单层MoS _2的大规模外延生长和转移引起了极大的关注。在这里，我们报告通过化学气相沉积（CVD）方法在单晶蓝宝石晶片上高取向连续且均匀的单层MoS ₂薄膜的晶片级外延生长。外延膜是高质量的，并且通过许多0°，60°畴和60°畴边界缝合。此外，可以通过简单的压模转印工艺来转印和堆叠这种晶片级单层MoS ₂膜，并且该基板可重复用于后续的生长。我们的进步将促进可扩展地制造各种用于实际应用的电子，山谷电子和光电设备。

更新日期：2017-11-21

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