A small bandgap (3E,7E)-3,7-bis(2-oxoindolin-3-ylidene)benzo[1,2-b:4,5-b′]difuran-2,6(3H,7H)-dione (IBDF) based polymer semiconductor for near-infrared organic phototransistors,Journal of Materials Chemistry C

当前位置： X-MOL 学术 › J. Mater. Chem. C › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

A small bandgap (3E,7E)-3,7-bis(2-oxoindolin-3-ylidene)benzo[1,2-b:4,5-b′]difuran-2,6(3H,7H)-dione (IBDF) based polymer semiconductor for near-infrared organic phototransistors
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2017-11-06 00:00:00 , DOI: 10.1039/c7tc03584e
Yinghui He _{1,

2,

3,

4} , Jesse T. E. Quinn _{1,

2,

3,

4} , Dongliang Hou _{1,

2,

3,

4,

5} , Jenner H.L. Ngai _{1,

2,

3,

4} , Yuning Li _{1,

2,

3,

4}

Affiliation

A (3E,7E)-3,7-bis(2-oxoindolin-3-ylidene)benzo[1,2-b:4,5-b′]difuran-2,6(3H,7H)-dione (IBDF)-based small bandgap donor–acceptor (D–A) polymer (PIBDFBTO-HH) was synthesized, which contains a strategically chosen solubilizing electron-rich building block, 3,3'-bis(dodecyloxy)-2,2′-bithiophene (BTO) as a donor. PIBDFBTO-HH has a very small band gap of 0.95 eV, absorbing up to 1700 nm in the near-infrared (NIR) region, which enables its application in NIR photodetection. This polymer exhibits efficient ambipolar charge transport properties with balanced hole and electron mobilities of up to 0.16 cm² V⁻¹ s⁻¹ and 0.14 cm² V⁻¹ s⁻¹, respectively, in organic thin film transistors (OTFTs) in the absence of light. In the p-channel operation regime, the organic phototransistor (OPT) devices based on PIBDFBTO-HH demonstrated photosensitivities (P) of 130 and 40 under the illumination of 850 nm and 940 nm LED light sources, respectively. The photoresponsivity (R) under the 940 nm LED reached 450 mA W⁻¹. In contrast, in the n-channel operation regime, a negative photoresponse, namely a decrease in the drain current, was observed, which accounted for the increased number of trapped electrons that offset the applied gate bias.

中文翻译：

小带隙（3 E，7 E）-3,7-双（2-氧代吲哚-3-亚基）苯并[1,2- b：4,5- b ']二呋喃-2,6（3 H，7用于近红外有机光电晶体管的基于H）-二酮（IBDF）的聚合物半导体

A（3 E，7 E）-3,7-双（2-氧代吲哚-3-亚基）苯并[1,2- b：4,5- b ']二呋喃-2,6（3 H，7 H）合成了基于-dione（IBDF）的小带隙供体-受体（D–A）聚合物（PIBDFBTO-HH），其中包含策略性选择的可溶解的富电子结构单元3,3'-bis（十二烷基氧基）-2， 2'-联噻吩（BTO）作为供体。PIBDFBTO-HH的带隙非常小，为0.95 eV，在近红外（NIR）区域吸收高达1700 nm，使其能够在NIR光电检测中应用。该聚合物表现出有效的双极性电荷传输性质，具有平衡的空穴和电子迁移率，最高可达0.16 cm ² V在不存在光的有机薄膜晶体管（OTFT）中，分别为^-1 s^-1和0.14 cm² V^-1 s^-1。在p通道操作方案中，基于PIBDFBTO-HH的有机光电晶体管（OPT）器件在850 nm和940 nm LED光源的照射下分别显示出130和40的光敏性（P）。940 nm LED下的光敏度（R）达到450 mA W^-1。相比之下，在n通道操作方案中，观察到负的光响应，即漏极电流的减小，这解释了抵消所施加的栅极偏置的俘获电子数量的增加。

更新日期：2017-11-20

点击分享查看原文

点击收藏

阅读更多本刊最新论文本刊介绍/投稿指南11