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Thickness and angular dependence of the magnetocurrent of hot electrons in a magnetic tunnel transistor with crossed anisotropies
Physical Review B ( IF 3.2 ) Pub Date : 2017-11-20 00:00:00 , DOI: 10.1103/physrevb.96.174426
C. Vautrin , D. Lacour , G. Sala , Y. Lu , F. Montaigne , M. Hehn

We have studied the thickness and angular dependence of the magnetocurrent of hot electrons in a magnetic tunnel transistor (MTT) with crossed magnetic anisotropies. In a first step, we show that the magnetocurrent increases with ferromagnetic layer thickness as for MTTs with collinear magnetic configurations. The maximum magnetocurrent value is obtained to be 85%, which is close to the theoretical maximum value of 100% for MTTs with crossed magnetic configurations. In a second step, we demonstrate that we are able to reproduce both current vs field direction and current vs field intensity measurements in a framework taking into account a reduced number of magnetic parameters and a simple cosine dependence of the hot-electron current on the angle between magnetizations.

中文翻译:

具有交叉各向异性的磁性隧道晶体管中热电子磁流的厚度和角度依赖性

我们已经研究了具有交叉磁各向异性的磁性隧道晶体管(MTT)中热电子的磁流的厚度和角度依赖性。第一步,我们表明,与共线磁性结构的MTT相比,磁电流随铁磁层厚度的增加而增加。获得的最大磁流值为85%,接近具有交叉磁配置的MTT的理论最大值100%。在第二步中,我们证明了在考虑到减少的磁参数数量以及热电子电流对角度的简单余弦依赖性的情况下,我们能够在一个框架中重现电流与磁场方向以及电流与磁场强度的测量结果之间的磁化强度。
更新日期:2017-11-20
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