Residual stress analysis of 4H-SiC crystals obtained by a top-seeded solution growth method,CrystEngComm

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Residual stress analysis of 4H-SiC crystals obtained by a top-seeded solution growth method
CrystEngComm ( IF 2.6 ) Pub Date : 2017-11-01 00:00:00 , DOI: 10.1039/c7ce01641g
Yeong-Jae Yu _{1,

2,

3} , Dae-Seop Byeon _{1,

2,

3} , Yun-Ji Shin _{1,

2,

3} , Su-Hun Choi _{1,

2,

3,

4,

5} , Myung-Hyun Lee _{1,

2,

3} , Won-Jae Lee _{3,

4,

5,

6,

7} , Seong-Min Jeong _{1,

2,

3}

Affiliation

The top-seeded solution growth (TSSG) method is an alternative technique for growing SiC which can reduce the defect levels in the crystal. With TSSG, the SiC crystal is grown on a SiC seed crystal attached to a seed shaft. The seed shaft is typically graphite; the mismatch in the thermal expansion coefficients between the materials induces residual stresses in the grown crystal. Furthermore, liquid droplets remaining on the grown SiC surface after crystal growth may contribute to residual surface stresses. Hence, in this study, we analyzed the residual stress of SiC crystals grown via the TSSG method, which has not yet been extensively studied. The surface stress was quantitatively evaluated using high-resolution X-ray diffraction (HRXRD) and Raman spectroscopy before and after the TSSG process. The dislocation distribution and crystalline quality were also characterized using synchrotron white beam X-ray topography (SWBXRT) and HRXRD. Many micropipes (MPs) were generated during the post-growth in the liquid droplets. The formation of these MPs was assumed to reduce the residual stresses on the crystal surface.

中文翻译：

顶部溶液生长法获得的4H-SiC晶体的残余应力分析

顶晶溶液生长（TSSG）方法是生长SiC的另一种方法，可以降低晶体中的缺陷水平。使用TSSG，SiC晶体可以在连接到籽晶轴的SiC籽晶上生长。种子轴通常是石墨；材料之间的热膨胀系数不匹配会在生长的晶体中引起残余应力。此外，晶体生长后残留在生长的SiC表面上的液滴可能会导致残留的表面应力。因此，在这项研究中，我们分析了通过生长的SiC晶体的残余应力。TSSG方法，尚未得到广泛研究。在TSSG工艺之前和之后，使用高分辨率X射线衍射（HRXRD）和拉曼光谱对表面应力进行了定量评估。还使用同步加速器白束X射线形貌（SWBXRT）和HRXRD表征了位错分布和晶体质量。在生长后的液滴中产生了许多微管（MPs）。假定这些MP的形成是为了减少晶体表面上的残余应力。

更新日期：2017-11-20

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