We report on the in situ growth of coherently embedded Ag nanostructures using real time temperature dependent synchrotron X-ray diffraction (XRD) measurements. ≈17 nm thick GeO_x film was grown on native oxide covered silicon substrates (GeO_x/SiO_x/Si) using a physical vapor deposition (PVD) method, which were used as the substrates for Ag nanostructures growth. For growing Ag nanostructures, two different sources of silver were used. In one system, ≈2 nm silver thin film was grown on the GeO_x/SiO_x/Si substrates using a PVD method, while in another system, silver wires were kept on the specimen hot stage (chemical vapor deposition) along with the above substrates. All the in situ growth and real time XRD were done under atmospheric conditions. The lattice constant of the Ag nanostructures obtained from the ex situ growth specimens was used to compare with the real time high temperature XRD measurements. As the temperature is raised from room temperature to 850 °C while performing in situ growth, the evolutions of various diffraction peaks such as (111), (200) and (220), reflecting from the growth facets of Ag nanostructures, were monitored. By measuring the deviation of the Ag lattice parameter due to the shift in the diffraction peak positions as a function of temperature, the thermal expansion coefficients for the Ag nanostructures in a matrix have been determined. In one case, the thermal expansion coefficient was found to decrease from 1.9 × 10⁻⁵/°C to 1.82 × 10⁻⁵/°C with the increase of annealing temperature from 750 °C to 850 °C.

中文翻译：

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原位同步加速器X射线衍射研究硅中相干嵌入银纳米结构的生长

我们报告使用实时温度相关的同步加速器X射线衍射（XRD）测量相关地嵌入Ag纳米结构的原位生长。使用物理气相沉积（PVD）方法，在天然氧化物覆盖的硅衬底（GeO _x / SiO _x / Si）上生长了≈17nm厚的GeO _x膜，该膜被用作Ag纳米结构生长的衬底。为了生长Ag纳米结构，使用了两种不同的银源。在一个系统中，使用PVD方法在GeO _x / SiO _x / Si衬底上生长了约2 nm的银薄膜，而在另一个系统中，将银线与上述方法一起保持在样品热台上（化学气相沉积）基材。一切在大气条件下进行原位生长和实时XRD。从异位生长样品获得的银纳米结构的晶格常数用于与实时高温XRD测量进行比较。当温度从室温升至850°C时，同时进行原位测试在生长过程中，监测了从Ag纳米结构的生长面反映出的各种衍射峰（如（111），（200）和（220））的演变。通过测量由于衍射峰位置的变化引起的Ag晶格参数随温度的变化，已经确定了基体中Ag纳米结构的热膨胀系数。在一种情况下，发现随着退火温度从750℃升高到850℃ ，热膨胀系数从1.9×10 ^-5 /℃降低到1.82×10 ^-5 /℃。