Transparent conductive NiO thin films with 18 at.% Cu dopant were fabricated by ion beam assisted deposition (IBAD). Their structural and optoelectronic properties were compared with undoped NiO films and NiO films doped with 12 at.% Cu, and also compared with NiO:Cu (18 at.%) films deposited by RF sputtering as reported in our previous work. The results show that the crystallinity of NiO thin films deposited through IBAD technology is much better than that of the films deposited by RF sputtering. Thanks to this reason, the highest carrier mobility above 45 cm 2 V −1 s −1 for NiO:Cu (18 at.%) film can be realized here. Meanwhile, the films’ resistivity remains an acceptable value, varying from 2.05 to 0.064 Ω·cm with oxygen ion beam current changing from 0.2 to 0.8 A. This feature is imperative for p-type transparent conductive oxides (TCOs) applied in various domains. In addition, with oxygen ion beam current increase, the increase of the Ni 3+ /Ni 2+ ratio leads to more Ni 2+ vacancies be introduced into NiO films, which is beneficial to generate holes and improve carrier concentration. In this work, the optimal carrier mobility of NiO film doped with 18 at.% Cu is obtained when the oxygen ion beam current is 0.2 A. Its carrier concentration and electrical resistivity are 7.26 × × 10 16 cm −3 and 2.05 Ω·cm, respectively.

中文翻译：

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p型导电NiO x ：通过离子束辅助沉积沉积的具有高载流子迁移率的Cu薄膜

通过离子束辅助沉积 (IBAD) 制造具有 18 at.% Cu 掺杂剂的透明导电 NiO 薄膜。将它们的结构和光电特性与未掺杂的 NiO 薄膜和掺杂 12 at.% Cu 的 NiO 薄膜进行比较，并与我们之前工作中报道的通过 RF 溅射沉积的 NiO:Cu (18 at.%) 薄膜进行比较。结果表明，通过IBAD技术沉积的NiO薄膜的结晶度远优于RF溅射沉积的薄膜。由于这个原因，NiO:Cu (18 at.%) 膜的最高载流子迁移率高于 45 cm 2 V -1 s -1 在这里可以实现。同时，薄膜的电阻率保持在可接受的值，从 2.05 到 0.064 Ω·cm 变化，氧离子束电流从 0.2 到 0.8 A。这一特性对于应用于各种领域的 p 型透明导电氧化物 (TCO) 是必不可少的。此外，随着氧离子束电流的增加，Ni 3+ /Ni 2+ 比值的增加导致更多的Ni 2+ 空位被引入到NiO薄膜中，有利于产生空穴和提高载流子浓度。在这项工作中，当氧离子束电流为 0.2 A 时，获得了掺杂 18 at.% Cu 的 NiO 薄膜的最佳载流子迁移率。其载流子浓度和电阻率为 7.26 × × 10 16 cm -3 和 2.05 Ω·cm ， 分别。