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Low-temperature sintering of Ti 1−x Cu x/3 Nb 2x/3 O 2 (x = 0.23) microwave dielectric ceramics with CuO and B 2 O 3 addition
Ceramics International ( IF 5.1 ) Pub Date : 2018-02-01 , DOI: 10.1016/j.ceramint.2017.11.108
Hui Shao , Zhifu Liu , Gang Jian , Yongxiang Li

Abstract The influence of CuO and B2O3 addition on the sintering behavior, microstructure and microwave dielectric properties of Ti1−xCux/3Nb2x/3O2 (TCN, x = 0.23) ceramic have been investigated. It was found that the addition of CuO and B2O3 successfully reduced the sintering temperature of TCN ceramics from 950 to 875 °C. X-ray diffraction studies showed that addition of CuO-B2O3 has no effect on the phase composition. The TCN ceramics with 0.5 wt% CuO-B2O3 addition showed a high dielectric constant of 95.63, τf value of + 329 ppm/°C and a good Q × f value of 8700 GHz after sintered at 875 °C for 5 h, cofirable with silver electrode.

中文翻译:

添加CuO和B 2 O 3 的Ti 1-x Cu x/3 Nb 2x/3 O 2 (x = 0.23)微波介电陶瓷的低温烧结

摘要 研究了CuO 和B2O3 添加对Ti1−xCux/3Nb2x/3O2 (TCN, x = 0.23) 陶瓷的烧结行为、微观结构和微波介电性能的影响。结果表明,CuO和B2O3的加入成功地将TCN陶瓷的烧结温度从950℃降低到875℃。X 射线衍射研究表明,添加 CuO-B2O3 对相组成没有影响。添加 0.5 wt% CuO-B2O3 的 TCN 陶瓷在 875°C 下烧结 5 小时后显示出 95.63 的高介电常数、+329 ppm/°C 的 τf 值和 8700 GHz 的良好 Q × f 值,与银电极。
更新日期:2018-02-01
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