Room-Temperature Synthesis of GaN Driven by Kinetic Energy beyond the Limit of Thermodynamics,ACS Applied Materials & Interfaces

当前位置： X-MOL 学术 › ACS Appl. Mater. Interfaces › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Room-Temperature Synthesis of GaN Driven by Kinetic Energy beyond the Limit of Thermodynamics
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-11-17 00:00:00 , DOI: 10.1021/acsami.7b13694
Takane Imaoka ₁ , Takeru Okada , Seiji Samukawa , Kimihisa Yamamoto ₁

Affiliation

The nitridation reaction is significantly important to utilize the unique properties of nitrides and nitrogen-doped materials. However, nitridation generally requires a high temperature or highly reactive reagents (often explosive) because the energies of N–N bond cleavage and nitrogen anion formation (N^3–) are very high. We demonstrate the first room-temperature synthesis of GaN directly from GaCl₃ by nanoscale atom exchange reaction. Nonequilibrium nitrogen molecules with very high translational energy were used as a chemically stable and safe nitrogen source. The irradiation of molecular nitrogen to the desired reaction area successfully provided a gallium nitride (GaN) nanosheet that exhibited a typical photoluminescence spectrum. Because this process retains the target substrate room temperature and does not involve any photon nor charged ion, it allows damage-less synthesis of the semiconducting metal nitrides, even directly on plastic substrates such as polyethylene terephthalate (PET).

中文翻译：

超越热力学极限的动能驱动的GaN室温合成

氮化反应对于利用氮化物和氮掺杂材料的独特性能非常重要。但是，氮化通常需要高温或高反应性的试剂（通常是爆炸性试剂），因为N–N键断裂和氮阴离子形成（N ^3–）的能量非常高。我们展示了直接从GaCl ₃进行GaN的首次室温合成通过纳米级原子交换反应。具有很高翻译能量的非平衡氮分子被用作化学稳定和安全的氮源。分子氮辐射到所需的反应区域成功地提供了显示出典型的光致发光光谱的氮化镓（GaN）纳米片。由于此过程可保持目标衬底的室温，并且不涉及任何光子或带电离子，因此即使在诸如聚对苯二甲酸乙二醇酯（PET）的塑料衬底上也可以无损合成半导体金属氮化物。

更新日期：2017-11-19

点击分享查看原文

点击收藏

阅读更多本刊最新论文本刊介绍/投稿指南11