Abstract We present a novel methodology to synthesize two-dimensional (2D) lateral heterostructures of graphene and MoS2 sheets with molecular carbon nanomembranes (CNMs), which is based on electron beam induced stitching. Monolayers of graphene and MoS2 were grown by chemical vapor deposition (CVD) on copper and SiO2 substrates, respectively, transferred onto gold/mica substrates and patterned by electron beam lithography or photolithography. Self-assembled monolayers (SAMs) of aromatic thiols were grown on the gold film in the areas where the 2D materials were not present. An irradiation with a low energy electron beam was employed to convert the SAMs into CNMs and simultaneously stitching the CNM edges to the edges of graphene and MoS2, therewith forming a heterogeneous but continuous film composed of two different materials. The formed lateral heterostructures possess a high mechanical stability, enabling their transfer from the gold substrate onto target substrates and even the preparation as freestanding sheets. We characterized the individual steps of this synthesis and the structure of the final heterostructures by complementary analytical techniques including optical microscopy, Raman spectroscopy, atomic force microscopy (AFM), helium ion microscopy (HIM), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) and find that they possess nearly atomically sharp boundaries.

中文翻译：

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通过电子束诱导缝合二维材料的横向异质结构

摘要 我们提出了一种新的方法来合成二维 (2D) 石墨烯和二硫化钼片与分子碳纳米膜 (CNM) 的横向异质结构，该方法基于电子束诱导缝合。石墨烯和 MoS2 的单层分别通过化学气相沉积 (CVD) 在铜和 SiO2 衬底上生长，转移到金/云母衬底上并通过电子束光刻或光刻进行图案化。芳香硫醇的自组装单层（SAMs）生长在金膜上不存在二维材料的区域。采用低能电子束照射将 SAM 转化为 CNM，同时将 CNM 边缘缝合到石墨烯和 MoS2 的边缘，从而形成由两种不同材料组成的异质但连续的薄膜。形成的横向异质结构具有很高的机械稳定性，使其能够从金基板转移到目标基板上，甚至可以制备成独立的片材。我们通过补充分析技术，包括光学显微镜、拉曼光谱、原子力显微镜 (AFM)、氦离子显微镜 (HIM)、X 射线光电子能谱 (XPS) 和高通量分析技术，表征了这种合成的各个步骤和最终异质结构的结构。分辨率透射电子显微镜 (HRTEM) 并发现它们具有几乎原子级的清晰边界。