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Size‐Controlled Graphene Nanodot Arrays/ZnO Hybrids for High‐Performance UV Photodetectors
Advanced Science ( IF 14.3 ) Pub Date : 2017-11-17 , DOI: 10.1002/advs.201700334 Ruidie Tang 1 , Sancan Han 2 , Feng Teng 1 , Kai Hu 1 , Zhiming Zhang 1 , Mingxiang Hu 1 , Xiaosheng Fang 1
Advanced Science ( IF 14.3 ) Pub Date : 2017-11-17 , DOI: 10.1002/advs.201700334 Ruidie Tang 1 , Sancan Han 2 , Feng Teng 1 , Kai Hu 1 , Zhiming Zhang 1 , Mingxiang Hu 1 , Xiaosheng Fang 1
Affiliation
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Graphene nanodots (GNDs) are one of the most attractive graphene nanostructures due to their tunable optoelectronic properties. Fabricated by polystyrene‐nanosphere lithography, uniformly sized graphene nanodots array (GNDA) is constructed as an ultraviolet photodetector (PD) with ZnO nanofilm spin coated on it. The size of GNDA can be well controlled from 45 to 20 nm varying the etching time. It is revealed in the study that the photoelectric properties of ZnO/GNDA PD are highly GNDA size‐dependent. The highest responsivity (R) and external quantum efficiency of ZnO/GNDA (20 nm) PD are 22.55 mA W−1 and 9.32%, almost twofold of that of ZnO PD. Both ZnO/GNDA (20 nm) PD and ZnO/GNDA (30 nm) PD exhibit much faster response speed under on/off switching light and have shorter rise/decay time compared with ZnO PD. However, as the size of GNDA increase to 45 nm, the PD appears poor performance. The size‐dependent phenomenon can be explained by the energy band alignments in ZnO/GNDA hybrids. These efforts reveal the enhancement of GNDs on traditional photodetectors with tunable optoelectronic properties and hold great potential to pave a new way to explore the various remarkable photodetection performances by controlling the size of the nanostructures.
中文翻译：
用于高性能UV光电探测器的尺寸受控的石墨烯纳米点阵列/ ZnO杂化物
石墨烯纳米点（GND）由于具有可调的光电特性，因此是最有吸引力的石墨烯纳米结构之一。通过聚苯乙烯-纳米球光刻技术制造的均匀尺寸的石墨烯纳米点阵列（GNDA）被构造为紫外光电探测器（PD），上面旋涂有ZnO纳米膜。改变蚀刻时间，可以将GNDA的尺寸控制在45 nm至20 nm之间。研究表明，ZnO / GNDA PD的光电性能高度依赖于GNDA尺寸。ZnO / GNDA（20 nm）PD的最高响应度（R）和外部量子效率为22.55 mA W -1和9.32％，几乎是ZnO PD的两倍。与ZnO PD相比，ZnO / GNDA（20 nm）PD和ZnO / GNDA（30 nm）PD在开/关切换光下均显示出更快的响应速度，并且上升/衰减时间更短。但是，随着GNDA的尺寸增加到45 nm，PD表现不佳。尺寸相关的现象可以通过ZnO / GNDA杂化子的能带排列来解释。这些努力揭示了具有可调节光电特性的传统光电探测器上GND的增强，并为通过控制纳米结构的尺寸探索各种卓越的光电探测性能铺平了道路。
更新日期：2017-11-17
中文翻译：
用于高性能UV光电探测器的尺寸受控的石墨烯纳米点阵列/ ZnO杂化物
石墨烯纳米点（GND）由于具有可调的光电特性，因此是最有吸引力的石墨烯纳米结构之一。通过聚苯乙烯-纳米球光刻技术制造的均匀尺寸的石墨烯纳米点阵列（GNDA）被构造为紫外光电探测器（PD），上面旋涂有ZnO纳米膜。改变蚀刻时间，可以将GNDA的尺寸控制在45 nm至20 nm之间。研究表明，ZnO / GNDA PD的光电性能高度依赖于GNDA尺寸。ZnO / GNDA（20 nm）PD的最高响应度（R）和外部量子效率为22.55 mA W -1和9.32％，几乎是ZnO PD的两倍。与ZnO PD相比，ZnO / GNDA（20 nm）PD和ZnO / GNDA（30 nm）PD在开/关切换光下均显示出更快的响应速度，并且上升/衰减时间更短。但是，随着GNDA的尺寸增加到45 nm，PD表现不佳。尺寸相关的现象可以通过ZnO / GNDA杂化子的能带排列来解释。这些努力揭示了具有可调节光电特性的传统光电探测器上GND的增强，并为通过控制纳米结构的尺寸探索各种卓越的光电探测性能铺平了道路。
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