Origin of Voltage‐Dependent High Ideality Factors in Graphene–Silicon Diodes,Advanced Electronic Materials

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Origin of Voltage‐Dependent High Ideality Factors in Graphene–Silicon Diodes
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2017-11-17 , DOI: 10.1002/aelm.201700317
Hong-Ki Park ₁ , Jaewu Choi ₁

Affiliation

Undoubtedly graphene–silicon (GS) heterostructure devices will play significant roles as future rectifiers, potential barrier modulators, photodetectors, photovoltaic devices, biochemical sensors, and so on. However, typical GS devices suffer from unusually wide‐range voltage‐dependent high ideality factors (η = 1.1–33.5). To overcome this hurdle, the origin of this wide‐range voltage‐dependent ideality factor should first be identified but this has not yet been fully studied. This study focuses on identifying the origin using impedance spectroscopy in conjunction with current–voltage, Raman, and X‐ray photoemission spectroscopy. The impedance spectra are analyzed with an equivalent distributed circuit model that accounts for the voltage‐dependent resistance and capacitance of graphene, the graphene–metal contact, the silicon interface states, and the nonequilibrium behavior in GS junction. This study clearly shows that the voltage‐dependent resistance and capacitance of interface states, graphene, and graphene–metal contact are responsible for the wide‐range voltage‐dependent high ideality factors. This study provides a potential method to overcome the drawbacks of GS devices.

中文翻译：

石墨烯-硅二极管中与电压有关的高理想因子的起源

毫无疑问，石墨烯-硅（GS）异质结构器件将在未来的整流器，势垒调制器，光电探测器，光伏器件，生化传感器等方面发挥重要作用。但是，典型的GS设备具有异常宽范围的电压依赖性高理想因子（η= 1.1–33.5）。为了克服这一障碍，应首先确定这种宽范围电压相关理想因子的来源，但尚未对此进行充分研究。这项研究着重于使用阻抗光谱技术结合电流-电压，拉曼和X射线光发射光谱技术来鉴定起源。使用等效的分布式电路模型分析阻抗谱，该模型说明了石墨烯与电压有关的电阻和电容，石墨烯与金属的接触，硅界面态，以及GS结中的非平衡行为。这项研究清楚地表明，界面态，石墨烯和石墨烯-金属接触的电压依赖性电阻和电容是宽电压依赖性高理想因子的原因。这项研究提供了一种潜在的方法来克服GS设备的缺点。

更新日期：2017-11-17

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