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Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-11-16 00:00:00 , DOI: 10.1021/acsami.7b12946 Taehong Gwon 1 , Ahmed Yousef Mohamed 2 , Chanyoung Yoo 1 , Eui-sang Park 1 , Sanggyun Kim 1 , Sijung Yoo 1 , Han-Koo Lee 3 , Deok-Yong Cho 2 , Cheol Seong Hwang 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-11-16 00:00:00 , DOI: 10.1021/acsami.7b12946 Taehong Gwon 1 , Ahmed Yousef Mohamed 2 , Chanyoung Yoo 1 , Eui-sang Park 1 , Sanggyun Kim 1 , Sijung Yoo 1 , Han-Koo Lee 3 , Deok-Yong Cho 2 , Cheol Seong Hwang 1
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The local bonding structures of GexTe1–x (x = 0.5, 0.6, and 0.7) films prepared through atomic layer deposition (ALD) with Ge(N(Si(CH3)3)2)2 and ((CH3)3Si)2Te precursors were investigated using Ge K-edge X-ray absorption spectroscopy (XAS). The results of the X-ray absorption fine structure analyses show that for all of the compositions, the as-grown films were amorphous with a tetrahedral Ge coordination of a mixture of Ge–Te and Ge–Ge bonds but without any signature of Ge–GeTe decomposition. The compositional evolution in the valence band electronic structures probed through X-ray photoelectron spectroscopy suggests a substantial chemical influence of additional Ge on the nonstoichiometric GeTe. This implies that the ALD process can stabilize Ge-abundant bonding networks like −Te–Ge–Ge–Te– in amorphous GeTe. Meanwhile, the XAS results on the Ge-rich films that had undergone post-deposition annealing at 350 °C show that the parts of the crystalline Ge-rich GeTe became separated into Ge crystallites and rhombohedral GeTe in accordance with the bulk phase diagram, whereas the disordered GeTe domains still remained, consistent with the observations of transmission electron microscopy and Raman spectroscopy. Therefore, amorphousness in GeTe may be essential for the nonsegregated Ge-rich phases and the low growth temperature of the ALD enables the achievement of the structurally metastable phases.
中文翻译：
原子层沉积制备非晶态和部分结晶Ge-Rich GeTe薄膜相稳定性的结构分析
Ge的局部接合结构X碲1- X（X = 0.5，0.6和0.7）的膜通过原子层沉积（ALD）有Ge（N（硅（CH制备3）3）2）2和（（CH 3）3硅）2使用Ge K边缘X射线吸收光谱（XAS）研究了Te的前体。X射线吸收精细结构分析的结果表明，对于所有成分，成膜都是无定形的，具有Ge–Te和Ge–Ge键的混合物的四面体Ge配位，但没有Ge–的任何特征。锗酸分解。通过X射线光电子能谱探测的价带电子结构的组成演变表明，额外的Ge对非化学计量的GeTe具有实质性的化学影响。这意味着ALD工艺可以稳定非晶态GeTe中的诸如-Te–Ge–Ge–Te–等Ge丰富的键合网络。同时，在350°C下进行了沉积后退火的富Ge薄膜的XAS结果表明，根据体相图，富锗GeTe晶体的一部分被分离为Ge微晶和菱形GeTe，而无序GeTe结构域仍然保留，与透射电子显微镜和拉曼光谱的观察结果一致。因此，GeTe中的非晶态可能对于非偏析的富含Ge的相必不可少，而ALD的低生长温度使得能够实现结构上亚稳的相。
更新日期：2017-11-17
中文翻译：
原子层沉积制备非晶态和部分结晶Ge-Rich GeTe薄膜相稳定性的结构分析
Ge的局部接合结构X碲1- X（X = 0.5，0.6和0.7）的膜通过原子层沉积（ALD）有Ge（N（硅（CH制备3）3）2）2和（（CH 3）3硅）2使用Ge K边缘X射线吸收光谱（XAS）研究了Te的前体。X射线吸收精细结构分析的结果表明，对于所有成分，成膜都是无定形的，具有Ge–Te和Ge–Ge键的混合物的四面体Ge配位，但没有Ge–的任何特征。锗酸分解。通过X射线光电子能谱探测的价带电子结构的组成演变表明，额外的Ge对非化学计量的GeTe具有实质性的化学影响。这意味着ALD工艺可以稳定非晶态GeTe中的诸如-Te–Ge–Ge–Te–等Ge丰富的键合网络。同时，在350°C下进行了沉积后退火的富Ge薄膜的XAS结果表明，根据体相图，富锗GeTe晶体的一部分被分离为Ge微晶和菱形GeTe，而无序GeTe结构域仍然保留，与透射电子显微镜和拉曼光谱的观察结果一致。因此，GeTe中的非晶态可能对于非偏析的富含Ge的相必不可少，而ALD的低生长温度使得能够实现结构上亚稳的相。
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