Highly Sensitive Ammonia Gas Sensor Based on Single-Crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor,Langmuir

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Highly Sensitive Ammonia Gas Sensor Based on Single-Crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor
Langmuir ( IF 3.7 ) Pub Date : 2017-11-16 00:00:00 , DOI: 10.1021/acs.langmuir.7b02466
Seohyun Mun ₁ , Yoonkyung Park ₁ , Yong-Eun Koo Lee ₁ , Myung Mo Sung ₁

Affiliation

A highly sensitive organic field-effect transistor (OFET)-based sensor for ammonia in the range of 0.01 to 25 ppm was developed. The sensor was fabricated by employing an array of single-crystal poly(3-hexylthiophene) (P3HT) nanowires as the organic semiconductor (OSC) layer of an OFET with a top-contact geometry. The electrical characteristics (field-effect mobility, on/off current ratio) of the single-crystal P3HT nanowire OFET were about 2 orders of magnitude larger than those of the P3HT thin film OFET with the same geometry. The P3HT nanowire OFET showed excellent sensitivity to ammonia, about 3 times higher than that of the P3HT thin film OFET at 25 ppm ammonia. The ammonia response of the OFET was reversible and was not affected by changes in relative humidity from 45 to 100%. The high ammonia sensitivity of the P3HT nanowire OFET is believed to result from the single crystal nature and high surface/volume ratio of the P3HT nanowire used in the OSC layer.

中文翻译：

基于单晶体聚（3-己基噻吩）（P3HT）有机场效应晶体管的高灵敏度氨气传感器

开发了一种高度敏感的基于有机场效应晶体管（OFET）的氨传感器，其范围为0.01至25 ppm。通过采用单晶聚（3-己基噻吩）（P3HT）纳米线阵列作为具有顶部接触几何结构的OFET的有机半导体（OSC）层来制造传感器。单晶P3HT纳米线OFET的电特性（场效应迁移率，开/关电流比）比具有相同几何形状的P3HT薄膜OFET的电特性大约2个数量级。P3HT纳米线OFET对氨具有极好的敏感性，是氨浓度为25 ppm时P3HT薄膜OFET的3倍左右。OFET的氨反应是可逆的，不受相对湿度从45％变为100％的影响。

更新日期：2017-11-16

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