Sensitized monolayer MoS2 phototransistors with ultrahigh responsivity,Journal of Materials Chemistry C

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Sensitized monolayer MoS2 phototransistors with ultrahigh responsivity
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2017-10-19 00:00:00 , DOI: 10.1039/c7tc03476h
Yujue Yang _{1,

2,

3,

4} , Nengjie Huo _{1,

2,

3,

4} , Jingbo Li _{1,

2,

3,

4,

5}

Affiliation

Monolayer MoS₂ photodetectors have been extensively investigated; however, their responsivity and sensitivity are highly limited due to the monolayer thin profile. Herein, we proposed a sensitized-MoS₂ photodetector consisting of a monolayer MoS₂ transport channel sensitizing with few-layer MoS₂ on top; this photodetector exhibited a very high responsivity of ∼10⁴ A W⁻¹ (at negative V_g) and ∼10⁵–10⁶ A W⁻¹ (at zero and positive V_g) due to improved photon absorption and enhanced mobility, more than one order of magnitude higher than that of the pure monolayer MoS₂. Moreover, the sensitivity D* as high as ∼10¹³ Jones was achieved by operating our sensitized device in the depletion mode, where there was very low noise. This device design and the simple approach proposed herein can open up new ways towards high-performance 2D material-based photodetectors.

中文翻译：

具有超高响应度的敏化单层MoS ₂光电晶体管

单层MoS ₂光电探测器已经得到了广泛的研究。然而，由于单层薄的外形，它们的响应度和灵敏度受到极大的限制。在此，我们提出了一种致敏-MOS ₂光检测器组成的单层的MoS的₂与少层的MoS传输信道增₂上顶; 该光电探测器的响应度非常高，约为10 ⁴ AW ^-1（在负V _g）和^{10 5} –10 ⁶ AW ^-1（在零和正V _g时））由于改善了光子吸收和增强的迁移率，比纯单层MoS ₂高出一个数量级。此外，通过在低噪声的耗尽模式下运行我们的敏化器件，可以实现高达约^{10 13} Jones的灵敏度D * 。本文提出的这种设备设计和简单方法可以为高性能2D材料基光电探测器开辟新途径。

更新日期：2017-11-16

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