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Effect of laser energy on the crystal structure and UV response characteristics of mixed-phase MgZnO thin films deposited by PLD and the fabrication of high signal/noise ratio solar-blind UV detector based on mix-phase MgZnO at lower voltage
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2017-10-11 00:00:00 , DOI: 10.1039/c7tc02195j S. Han 1, 2, 3, 4, 5 , X. H. Ji 1, 2, 3, 4, 5 , Q. L. An 1, 2, 3, 4, 5 , Y. M. Lu 1, 2, 3, 4, 5 , P. J. Cao 1, 2, 3, 4, 5 , W. J. Liu 1, 2, 3, 4, 5 , Y. X. Zeng 1, 2, 3, 4, 5 , F. Jia 1, 2, 3, 4, 5 , X. K. Liu 1, 2, 3, 4, 5 , D. L. Zhu 1, 2, 3, 4, 5
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2017-10-11 00:00:00 , DOI: 10.1039/c7tc02195j S. Han 1, 2, 3, 4, 5 , X. H. Ji 1, 2, 3, 4, 5 , Q. L. An 1, 2, 3, 4, 5 , Y. M. Lu 1, 2, 3, 4, 5 , P. J. Cao 1, 2, 3, 4, 5 , W. J. Liu 1, 2, 3, 4, 5 , Y. X. Zeng 1, 2, 3, 4, 5 , F. Jia 1, 2, 3, 4, 5 , X. K. Liu 1, 2, 3, 4, 5 , D. L. Zhu 1, 2, 3, 4, 5
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MgZnO thin films (with Mg0.4Zn0.6O as the target) were fabricated on fused quartz substrates employing PLD method under different laser energy densities. Cubic structured MgZnO thin films were made at laser energy densities of 20 J cm−2 and 22 J cm−2, whilst the MgZnO thin films were deposited along both cubic and hexagonal structures under higher laser energy density condition. When a higher energy density laser was focused on the MgZnO target during the deposition process, the MgZnO thin film was found to be deposited with a more hexagonal structure and a higher Zn composition. There are two response peaks located in the solar-blind UV and visible-blind UV regions within the UV response spectrum of the mixed-phase MgZnO based detector deposited at laser energy over 24 J cm−2. When the deposition laser energy density increased from 24 to 30 J cm−2, the maximum UV responsivity of the mixed-phase MgZnO-based detector increased from 0.06 A W−1 to 1 A W−1 at 40 V bias voltage, and the visible-blind UV response peak of the mix-phase MgZnO based detector was also higher due to the MgZnO adopting a more hexagonal structure; furthermore, a higher internal gain is obtained, which can be attributed to a higher density of interfaces between the MgZnO grains of different structures in the mixed-phase MgZnO thin film. At 5 V bias voltage, the Ilight(230 nm)/Idark ratio of the UV detector based on mix-phase MgZnO deposited at 24 J cm−2 reached 500, and the Ilight(290 nm)/Idark ratio of the UV detector based on mix-phase MgZnO deposited at 26 J cm−2 reached 1100. Therefore, the UV-detector based on mixed-phase MgZnO thin films is sensitive to solar-blind and visible-blind UV light with strong background noise (on Earth) when the boundaries between (111) an (200) cubic MgZnO makes obvious function in decreasing the dark current of the detectors at lower bias voltage.
中文翻译：
激光能量对PLD沉积的MgZnO混合相薄膜晶体结构和UV响应特性的影响以及基于低电压混合相MgZnO的高信噪比日盲紫外检测器的制备
在不同的激光能量密度下，采用PLD法在熔融石英衬底上制备了以Mg 0.4 Zn 0.6 O为靶的MgZnO薄膜。以20 J cm -2和22 J cm -2的激光能量密度制备立方结构的MgZnO薄膜，而MgZnO薄膜在较高的激光能量密度条件下沿立方和六边形结构沉积。当在沉积过程中将较高能量密度的激光聚焦在MgZnO靶上时，发现MgZnO薄膜的沉积具有更多的六角形结构和更高的Zn组成。在以24 J cm -2的激光能量沉积的基于MgZnO的混合相探测器的UV响应光谱内，在太阳盲UV和可见盲UV区域中有两个响应峰。当沉积激光能量密度从24 J cm -2增加到30 J cm -2时，基于MgZnO的混合相检测器的最大UV响应度从0.06 AW -1增加到1 AW -1在40 V偏置电压下，由于MgZnO采用更加六角形的结构，因此基于MgZnO的混合相检测器的可见盲UV响应峰也更高。此外，获得了更高的内部增益，这可以归因于混合相MgZnO薄膜中不同结构的MgZnO晶粒之间的界面密度更高。在5V偏置电压时，我光（230纳米）/我暗基于混合相的UV检测器的MgZnO保藏在24Ĵ厘米的比-2达到500和我的光（290纳米）/我暗的比基于沉积在26 J cm -2的混合相MgZnO的UV检测器 达到1100。因此，当（111）和（200）立方MgZnO之间的边界时，基于混合相MgZnO薄膜的UV检测器对具有强烈背景噪声（在地球上）的日盲和可见盲UV光敏感。在降低偏置电压下检测器的暗电流方面发挥了明显的作用。
更新日期：2017-11-16
中文翻译：
激光能量对PLD沉积的MgZnO混合相薄膜晶体结构和UV响应特性的影响以及基于低电压混合相MgZnO的高信噪比日盲紫外检测器的制备
在不同的激光能量密度下，采用PLD法在熔融石英衬底上制备了以Mg 0.4 Zn 0.6 O为靶的MgZnO薄膜。以20 J cm -2和22 J cm -2的激光能量密度制备立方结构的MgZnO薄膜，而MgZnO薄膜在较高的激光能量密度条件下沿立方和六边形结构沉积。当在沉积过程中将较高能量密度的激光聚焦在MgZnO靶上时，发现MgZnO薄膜的沉积具有更多的六角形结构和更高的Zn组成。在以24 J cm -2的激光能量沉积的基于MgZnO的混合相探测器的UV响应光谱内，在太阳盲UV和可见盲UV区域中有两个响应峰。当沉积激光能量密度从24 J cm -2增加到30 J cm -2时，基于MgZnO的混合相检测器的最大UV响应度从0.06 AW -1增加到1 AW -1在40 V偏置电压下，由于MgZnO采用更加六角形的结构，因此基于MgZnO的混合相检测器的可见盲UV响应峰也更高。此外，获得了更高的内部增益，这可以归因于混合相MgZnO薄膜中不同结构的MgZnO晶粒之间的界面密度更高。在5V偏置电压时，我光（230纳米）/我暗基于混合相的UV检测器的MgZnO保藏在24Ĵ厘米的比-2达到500和我的光（290纳米）/我暗的比基于沉积在26 J cm -2的混合相MgZnO的UV检测器 达到1100。因此，当（111）和（200）立方MgZnO之间的边界时，基于混合相MgZnO薄膜的UV检测器对具有强烈背景噪声（在地球上）的日盲和可见盲UV光敏感。在降低偏置电压下检测器的暗电流方面发挥了明显的作用。
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