Selective sorting of metallic/semiconducting single-walled carbon nanotube arrays by ‘igniter-assisted gas-phase etching’†,Materials Chemistry Frontiers

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Selective sorting of metallic/semiconducting single-walled carbon nanotube arrays by ‘igniter-assisted gas-phase etching’†
Materials Chemistry Frontiers ( IF 6.0 ) Pub Date : 2017-11-15 00:00:00 , DOI: 10.1039/c7qm00469a
Qiuchen Zhao _{1,

2,

3,

4,

5} , Zequn Wang _{1,

2,

3,

4,

5} , Lianming Tong _{1,

2,

3,

4,

5} , Zhe Zheng _{6,

7,

8,

9,

10} , Wenping Hu _{6,

7,

8,

9,

10} , Jin Zhang _{1,

2,

3,

4,

5}

Affiliation

Towards future applications, like nanoelectronic devices, techniques to obtain single-walled carbon nanotubes (SWNTs) with specific electronic types (semiconducting or metallic ones) are urgently required. Herein, we developed a rational approach for the preferential etching of either metallic or semiconducting SWNTs assisted by selective adsorption of molecules onto the corresponding SWNTs. The adsorbed molecules were easily oxidized under a temperature below the threshold for the etching of SWNTs, and the heat generated during oxidation could accelerate the etching process of nearby SWNTs. Based on this design, we could obtain semiconducting-enriched or metallic-enriched SWNT arrays with a purity of 93% and 86% assisted by the adsorption of different molecules. Further in-situ observation by polarized optical microscope ensured the acceleration of the etching process of SWNTs adsorbed by the molecular igniters. Our method combines the advantages of solution separation (high selectivity and diversity) and gas-phase etching (clean and high efficiency), providing more feasibility in obtaining SWNT horizontal arrays with uniform properties.

中文翻译：

通过“点火器辅助气相蚀刻”对金属/半导体单壁碳纳米管阵列进行选择性分选†

对于诸如纳米电子器件的未来应用，迫切需要获得具有特定电子类型（半导体或金属类型）的单壁碳纳米管（SWNT）的技术。本文中，我们开发了一种合理的方法，可通过选择性地将分子选择性吸附到相应的SWNT上，优先腐蚀金属或半导体SWNT。吸附的分子在低于蚀刻单壁碳纳米管的阈值以下的温度下很容易被氧化，并且在氧化过程中产生的热量可以加速附近单壁碳纳米管的蚀刻过程。基于此设计，我们可以得到半导体富集或金属富集的SWNT阵列，其纯度分别为93％和86％，并通过吸附不同的分子来辅助。进一步原位偏振光学显微镜的观察确保了分子点火器吸附的单壁碳纳米管的蚀刻过程的加速。我们的方法结合了溶液分离（高选择性和多样性）和气相蚀刻（清洁和高效）的优势，为获得具有均匀特性的SWNT水平阵列提供了更多的可行性。

更新日期：2017-11-15

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