Multi-color perovskite nanowire lasers through kinetically controlled solution growth followed by gas-phase halide exchange,Journal of Materials Chemistry C

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Multi-color perovskite nanowire lasers through kinetically controlled solution growth followed by gas-phase halide exchange
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2017-11-02 00:00:00 , DOI: 10.1039/c7tc03939e
Xianxiong He _{1,

2,

3,

4} , Peng Liu _{4,

5,

6,

7} , Suning Wu _{1,

2,

3,

4} , Qing Liao _{1,

2,

3,

4} , Jiannian Yao _{1,

2,

3,

4,

5} , Hongbing Fu _{1,

2,

3,

4,

5}

Affiliation

Integration of multi-color semiconductor nanowire lasers (NWLs) on a silicon substrate is a very challenging task, owing to both the material lattice mismatch and the incompatible growth temperature. Recently, organic–inorganic perovskite (CH₃NH₃PbX₃; X = Cl, Br, I) NWLs have been developed using a surface-initiated solution-growth method, which, however, requires post-synthesis transfer of nanowires from a growth substrate to a silicon wafer for device fabrication. Herein, we report multi-color perovskite nanowire lasers on arbitrary substrates (silicon or quartz substrates) through kinetically controlled growth followed by gas-phase halide exchange. First, we developed an antisolvent–vapor-diffusion induced crystallization method to kinetically direct the growth of CH₃NH₃PbCl₃ towards single-crystal nanowires rather than the crystal habit of plate-like morphology. The ratio of nanowires to square microplates was adjusted to be as high as 97% : 3%. Then we introduced a gas-phase halide-anion-exchange reaction to convert chloride nanowires into bromide and iodide ones upon exposure to the vapor of HX (X = Br, I), while preserving both the high crystallinity and the nanowire morphology. Upon optical excitation, Fabry–Perot lasing around 550 and 785 nm occurs from CH₃NH₃PbBr₃ and CH₃NH₃PbI₃ nanowires with an onset of 9.8 and 9.2 μJ cm⁻², respectively, with a maximum quality factor of 1260.

中文翻译：

动力学控制溶液生长，然后进行气相卤化物交换的多色钙钛矿纳米线激光器

由于材料晶格失配和生长温度不兼容，在硅基板上集成多色半导体纳米线激光器（NWL）是一项非常具有挑战性的任务。最近，有机-无机钙钛矿（CH ₃ NH ₃ PbX ₃; X = Cl，Br，I）NWL是使用表面引发的溶液生长方法开发的，然而，这需要将纳米线从合成衬底的合成后转移到器件制造的硅晶片上。在本文中，我们报告了通过动力学控制的生长，然后进行气相卤化物交换，在任意衬底（硅或石英衬底）上的多色钙钛矿纳米线激光器。首先，我们开发了一种由反溶剂-蒸汽扩散诱导的结晶方法，以动力学方式指导CH ₃ NH ₃ PbCl ₃的生长。倾向于单晶纳米线，而不是板状形态的晶体习惯。纳米线与方形微板的比例被调整为高达97％：3％。然后，我们引入了气相卤化物-阴离子交换反应，将氯化物纳米线在暴露于HX（X = Br，I）的蒸汽中时转化为溴化物和碘化物，同时保留了高结晶度和纳米线形态。在光激发时，CH ₃ NH ₃ PbBr ₃和CH ₃ NH ₃ PbI ₃纳米线的Fabry-Perot激射发生在550和785 nm附近，起始时间分别为9.8和9.2μJcm ^-2，最大质量因数为1260 。

更新日期：2017-11-15

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