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Formation Mechanism of Secondary Electron Contrast of Graphene Layers on a Metal Substrate
ACS Omega ( IF 3.7 ) Pub Date : 2017-11-13 00:00:00 , DOI: 10.1021/acsomega.7b01550
Kota Shihommatsu 1 , Junro Takahashi 1 , Yuta Momiuchi 1 , Yudai Hoshi 1 , Hiroki Kato 1 , Yoshikazu Homma 1
Affiliation  

Scanning electron microscopy (SEM) is widely used to observe graphene on metal substrates. However, the origin of the SEM image contrast of graphene is not well understood. In this work, we performed in situ SEM imaging of layer-number-controlled graphene on a Ni substrate using a high-pass energy filter for secondary electrons. We found that the graphene layer contrast was maximized at 15–20 eV, corresponding to the π–σ* interband transition in graphene. Our results indicate that the SEM image of graphene is produced by attenuation of the electrons emitted from the metal substrate by the monoatomic layers of graphene.

中文翻译:

金属基底上石墨烯层二次电子对比度的形成机理

扫描电子显微镜(SEM)被广泛用于观察金属基底上的石墨烯。但是,人们对石墨烯的SEM图像对比度的起源还不甚了解。在这项工作中,我们使用用于二次电子的高通能量滤光片在Ni基板上对层数受控的石墨烯进行了原位SEM成像。我们发现,石墨烯层的对比度在15–20 eV时达到最大值,与石墨烯中的π–σ *带间跃迁相对应。我们的结果表明,石墨烯的SEM图像是由石墨烯的单原子层衰减从金属基板发出的电子而产生的。
更新日期:2017-11-13
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