Abstract MgZnO films and ZnO/Mg0.19Zn0.81O single quantum well (QW) structures with well layer thickness from 1 to 4 nm were directly prepared on sapphire substrates at the low substrate temperature of 400 °C by pulsed laser deposition (PLD). The photoluminescence (PL) peak of QW shifted from 3.51 to 3.33 eV at room temperature as the well thickness was increased from 2 to 4 nm. The PL peak position of QW with well thickness of 2 nm can be well explained by Varshni’s relation and the best fitting to the data were E(0) = 3.558 eV, α = 2.17 × 10−4 eV/K, and β = 589 K. No S-shape variation of PL peak position with temperature for this QW indicates low-temperature growth is an ideal candidate for eliminating the stain effect in ZnO QW.

中文翻译：

---

通过脉冲激光沉积生长的 MgZnO 薄膜和 ZnO/MgZnO 单量子阱的紫外线发射

摘要 通过脉冲激光沉积 (PLD) 在 400 °C 的低衬底温度下，直接在蓝宝石衬底上制备了 MgZnO 薄膜和 ZnO/Mg0.19Zn0.81O 单量子阱 (QW) 结构，阱层厚度为 1 到 4 nm。随着阱厚度从 2 nm 增加到 4 nm，QW 的光致发光 (PL) 峰在室温下从 3.51 eV 移至 3.33 eV。具有 2 nm 阱厚度的 QW 的 PL 峰值位置可以通过 Varshni 关系很好地解释并且对数据的最佳拟合为 E(0) = 3.558 eV, α = 2.17 × 10−4 eV/K, 和 β = 589 K. 该 QW 的 PL 峰位置随温度没有 S 形变化表明低温生长是消除 ZnO QW 染色效应的理想候选者。