Abstract The growth of undoped GaSb epilayers on GaAs (0 0 1) substrates with 2° offcut towards 〈1 1 0〉, by molecular beam epitaxy system (MBE) at low growth temperature is reported. The strain due to the lattice mismatch of 7.78% is relieved spontaneously at the interface by using interfacial misfit array (IMF) growth mode. Three approaches of this technique are investigated. The difference consists in the steps after the growth of GaAs buffer layer. These steps are the desorption of arsenic from the GaAs surface, and the cooling down to the growth temperature, under or without antimony flux. The X-ray analysis and the transmission electron microscopy point out that desorption of arsenic followed by the substrate temperature decreasing under no group V flux leads to the best structural and crystallographic properties in the GaSb layer. It is found that the 2 µm-thick GaSb is 99.8% relaxed, and that the strain is relieved by the formation of a periodic array of 90° pure-edge dislocations along the [1 1 0] direction with a periodicity of 5.6 nm.

中文翻译：

---

GaAs衬底上GaSb外延层界面错配阵列生长模式的优化

摘要 报道了在低生长温度下通过分子束外延系统 (MBE) 在 GaAs (0 0 1) 衬底上向 <1 1 0> 切割 2° 的未掺杂 GaSb 外延层的生长。通过使用界面失配阵列 (IMF) 生长模式，7.78% 的晶格失配引起的应变在界面处自发缓解。研究了该技术的三种方法。不同之处在于生长 GaAs 缓冲层之后的步骤。这些步骤是从 GaAs 表面解吸砷，并在有或没有锑助焊剂的情况下冷却到生长温度。X 射线分析和透射电子显微镜表明，在没有 V 族通量的情况下，砷的解吸以及衬底温度的降低导致 GaSb 层中的最佳结构和晶体学特性。