The α-MoO₃ ceramics were prepared by uniaxial pressing and sintering of MoO₃ powder at 650 °C and their structure, microstructure, densification and sintering and microwave dielectric properties were investigated. The sintering temperature of α-MoO₃ was optimized based on the best densification and microwave dielectric properties. After sintering at 650 °C the relative permittivity was found to be 6.6 and the quality factor was 41,000 GHz at 11.3 GHz. The full-width half-maximum of the A_1g Raman mode of bulk α-MoO₃ at different sintering temperatures correlated well with the Qf values. Moreover, the sintered samples showed a temperature coefficient of the resonant frequency of −25 ppm/°C in the temperature range from −40 to 85 °C and they exhibited a very low coefficient of thermal expansion of ±4 ppm/°C. These microwave dielectric properties of α-MoO₃ will be of great benefit in future MoO₃ based materials and their applications.

α-的MoO ₃通过单轴压制和的MoO的烧结，制备陶瓷₃在650粉末℃，它们的结构，微结构，致密化和烧结和微波介电性能进行了研究。α-的MoO的烧结温度₃进行优化基于最佳的致密化和微波介电性能。在650°C烧结后，相对介电常数为6.6，质量因数在11.3 GHz为41,000 GHz。全宽度半最大值A的_1克散装的拉曼模式α-的MoO ₃在不同的烧结温度下，Qf值与Qf值很好地相关。此外，烧结样品在-40至85℃的温度范围内显示出共振频率的温度系数为-25ppm /℃，并且它们显示出非常低的±4ppm /℃的热膨胀系数。α-的MoO的这些微波介电性能₃将是有很大好处在未来的MoO ₃基材料和它们的应用。