Sb-doped ZnO thermoelectric films with microporous structures are fabricated by oxidizing evaporated Zn-Sb thin films in a leaf-like surface. High magnetic field (HMF) and Sb are employed to tune the formation of nanowires and nanorods in the microporous films and conduction type. Nanowire is formed in the film with Sb content of 3.0% and nanorod is formed with 4.6% Sb with the absence of HMF. P-type ZnO films with a wuterzite are formed. The resistivity of the films decreases by two orders of magnitude by increasing Sb content. The resistivity of films decreases 45% and 80% by forming nanowires and nanorods, respectively. The power factor of the nanorod structures increases by two orders of magnitude by comparison with others and reaches to 52.6 μW/m K². This indicates that the nanorod structures with a higher Sb content are easy to obtain stable p-type semiconductor with a higher power factor.

通过在叶片状表面上氧化蒸发的Zn-Sb薄膜来制造具有微孔结构的Sb掺杂ZnO热电薄膜。采用高磁场（HMF）和Sb来调节微孔膜和导电类型中纳米线和纳米棒的形成。在没有HMF的情况下，在膜中形成的纳米线的Sb含量为3.0％，在纳米棒中形成的Sb含量为4.6％。形成具有wuterzite的P型ZnO膜。通过增加Sb含量，膜的电阻率降低两个数量级。通过形成纳米线和纳米棒，薄膜的电阻率分别降低了45％和80％。与其他纳米棒结构相比，纳米棒结构的功率因数增加了两个数量级，达到52.6μW/ m K ^2。。这表明具有较高Sb含量的纳米棒结构易于获得具有较高功率因数的稳定的p型半导体。