The effect of H₂O₂ treatment on the surface properties of SiO₂ is studied. H₂O₂ treatment leads to the formation of Si(-OH)_x at the SiO₂ surface that serves to reduce the number of donor-like trap states, inducing the shift of the Fermi level toward the conduction band minimum. H₂O₂ treatment also leads to a noticeable reduction in the value of the SiO₂ capacitance per unit area. The effect of SiO₂ layers with H₂O₂ treatment on carrier transport for the pentacene/SiO₂–based organic thin-film transistor (OTFT) is also studied. Experimental identification confirms that the shift of the threshold voltage towards negative gate-source voltages is due to the reduced number of donor-like trap states in SiO₂ near the pentacene/SiO₂ interface. The existence of a hydrogenated layer between pentacene and SiO₂ leads to a change in the pentacene-SiO₂ interaction, increasing the value of the carrier mobility.

研究了H ₂ O ₂处理对SiO ₂表面性能的影响。H ₂ O ₂处理导致在SiO ₂表面形成Si（-OH）_x，该表面用于减少施主状陷阱态的数目，从而引起费米能级向导带最小值的移动。H ₂ O ₂处理还导致每单位面积的SiO ₂电容值明显降低。H ₂ O ₂处理的SiO ₂层对并五苯/ SiO ₂载流子传输的影响的有机薄膜晶体管（OTFT）也进行了研究。实验鉴定证实，阈值电压向负栅极-源极电压的偏移是由于并五苯/ SiO ₂界面附近的SiO _2中的供体状陷阱态的数量减少。在并五苯和SiO ₂之间存在氢化层导致并五苯-SiO ₂相互作用的改变，从而增加了载流子迁移率的值。