Abstract Radiation detectors with different thickness are needed to detect gamma rays with various energies. In this paper, a post-growth annealing method was used to improve the properties of CdMnTe:In (CMT:In) crystals with different thickness for gamma-ray detectors. The results indicated that Te inclusions in CMT:In crystals with different thickness were reduced remarkably after annealing. Both the resistivity and IR transmittance of annealed CMT:In crystals with different thickness increased obviously, which suggested that the crystal quality was improved. For the detectors fabricated by annealed CMT:In slices with 1 mm, 2 mm and 5 mm thickness, the energy resolutions were enhanced about 252%, 193% and 141%, respectively. And ( μτ ) e values were enhanced about 80%, 80% and 76%, respectively. The performance of the detectors was greatly improved after annealing.

中文翻译：

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伽玛射线探测器用不同厚度的 CdMnTe:In 晶体的有效退火研究

摘要 探测不同能量的伽马射线需要不同厚度的辐射探测器。在本文中，使用生长后退火方法来改善伽马射线探测器中不同厚度的 CdMnTe:In (CMT:In) 晶体的性能。结果表明，退火后不同厚度的CMT:In晶体中Te夹杂物显着减少。不同厚度退火后的CMT:In晶体的电阻率和红外透射率均明显增加，表明晶体质量有所提高。对于由退火 CMT 制造的探测器：在厚度为 1 mm、2 mm 和 5 mm 的切片中，能量分辨率分别提高了约 252%、193% 和 141%。并且 ( μτ ) e 值分别提高了约 80%、80% 和 76%。