Abstract Oxygen is one of the highest-concentration impurities in single crystals grown by the Czochralski (CZ) process, and seriously impairs the quality of the Si wafer. In this study, computer simulations were applied to design a new CZ system. A more appropriate thermal field was acquired by optimization of the heater structure. The simulation results showed that, compared with the conventional system, the oxygen concentration in the newly designed CZ system was reduced significantly throughout the entire CZ process because of the lower crucible wall temperature and optimized convection. To verify the simulation results, experiments were conducted on an industrial single-crystal furnace. The experimental results showed that the oxygen concentration was reduced significantly, especially at the top of the CZ-Si ingot. Specifically, the oxygen concentration was 6.19 × 1017 atom/cm3 at the top of the CZ-Si ingot with the newly designed CZ system, compared with 9.22 × 1017 atom/cm3 with the conventional system. Corresponding light-induced degradation of solar cells based on the top of crystals from the newly designed CZ system was 1.62%, a reduction of 0.64% compared with crystals from the conventional system (2.26%).

中文翻译：

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在直拉硅生长过程中通过加热器设计降低氧浓度

摘要 氧是直拉法（CZ）法生长的单晶中浓度最高的杂质之一，严重影响硅片的质量。在这项研究中，计算机模拟被应用于设计一个新的 CZ 系统。通过优化加热器结构获得了更合适的热场。仿真结果表明，与传统系统相比，新设计的 CZ 系统中的氧气浓度在整个 CZ 过程中显着降低，因为坩埚壁温度较低，对流得到优化。为了验证模拟结果，在工业单晶炉上进行了实验。实验结果表明，氧浓度显着降低，尤其是在 CZ-Si 锭的顶部。具体来说，新设计的 CZ 系统的 CZ-Si 锭顶部的氧浓度为 6.19 × 1017 atom/cm3，而传统系统的氧浓度为 9.22 × 1017 atom/cm3。基于新设计的 CZ 系统晶体顶部的太阳能电池的相应光诱导降解为 1.62%，与来自传统系统的晶体 (2.26%) 相比降低了 0.64%。