Abstract Computer simulations play an important role in determining the optimal design parameters for chemical vapor deposition (CVD) reactors, such as flow rates, positions of the inlet and outlet orifices, and rotational rates, etc. Reliability of the results of these simulations depends on the set of chemical reaction used to represent the process of deposition in the reactor. Aim of the present work is to validate the simple empirical reaction to model the epitaxial growth of silicon for a Dichlorosilane-H 2 (DCS)-H 2 system. Governing equations for continuity, momentum, energy, and reacting species are solved numerically using the finite volume method. The agreement between experimental and predicted growth rates for various DCS flow rates is shown to be satisfactory. The increase in growth rate with the increase in pressure is in accordance with the available data. Based on the validated chemical reaction model, a study was carried out to analyze the uniformity of the silicon layer thickness for two different flow rates in a planetary reactor. It was concluded that, based on the operating conditions, the uniformity of the silicon layer over the wafer is independent of the satellite rotational rate in the reactor.

中文翻译：

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二氯硅烷外延生长硅的数值模拟研究

摘要 计算机模拟在确定化学气相沉积 (CVD) 反应器的最佳设计参数方面起着重要作用，例如流速、进出口孔的位置和转速等。这些模拟结果的可靠性取决于用于表示反应器中沉积过程的一组化学反应。本工作的目的是验证简单的经验反应来模拟二氯硅烷-H 2 (DCS)-H 2 系统的硅外延生长。连续性、动量、能量和反应物种的控制方程使用有限体积方法进行数值求解。各种 DCS 流速的实验增长率和预测增长率之间的一致性被证明是令人满意的。增长速度随压力的增加而增加，与现有数据相符。基于经过验证的化学反应模型，进行了一项研究，以分析行星反应器中两种不同流速下硅层厚度的均匀性。得出的结论是，基于操作条件，晶片上硅层的均匀性与反应器中的卫星旋转速率无关。