The information on the electronic structure of nano- and microstructured semiconductors is crucial for their applications in photovoltaics, optoelectronics and photocatalysis. The distribution of intra-bandgap electronic states is one of the most relevant parameters which may be tuned in order to provide desired properties of a photoactive material. We propose the use of a modified spectroelectrochemical method for the characterisation of vacant electronic states distributed close to the edge of the titanium dioxide conduction band. These additional levels localized within the bandgap were semi-quantitatively characterized for several samples made of different polymorphs (or their blends) of TiO₂. The applicability of the method for the determination of deep and shallow electron traps was confirmed. A quantitative analysis of the latter was also conducted for the selected samples. The presented approach provides also the information on the stability of electronic states, which is crucial for numerous practical applications.

有关纳米和微结构半导体的电子结构的信息对于它们在光伏，光电和光催化领域的应用至关重要。带内电子状态的分布是最相关的参数之一，可以对其进行调整以提供所需的光敏材料性能。我们建议使用改进的光谱电化学方法来表征分布在二氧化钛导带边缘附近的空电子态。对于由TiO ₂的不同多晶型物（或其混合物）制成的几个样品，半定量地表征了带隙内的这些附加能级。。证实了该方法适用于深，浅电子陷阱的测定。还对选定的样品进行了后者的定量分析。提出的方法还提供了有关电子状态稳定性的信息，这对于许多实际应用而言至关重要。