In this work, Z-scheme heterostructure were constructed over the visible light response g-C₃N₄ photocatalysts by loading Porous silicon (PSi) to enhance the photocatalytic H₂ evolution performance. The synthesized Z-scheme g-C₃N₄/PSi composites with a PSi loading content of 2.50 wt% achieves the highest photocatalytic H₂ evolution rate at 870.4 µmol h⁻¹ g⁻¹, which is about 2 times as high as the pure g-C₃N₄ with H₂ evolution rate of 427.2 µmol h⁻¹ g⁻¹. Various techniques including XRD, SEM, TEM, FTIR, XPS, UPS, PL and electrochemical method were employed to demonstrate the successful construction of g-C₃N₄/PSi composites and to investigate the origin of the enhanced potocatalytic activity. The formed heterostructure between g-C₃N₄ nanosheets and PSi were verified to be the dominant reason for the enhancement of photocatalytic activity, resulting from the separation promotion of photogenerated charge carriers in a direct Z-scheme mechanism. This study presented a promising Z-scheme g-C₃N₄/PSi photocatalysts with promising H₂ evolution performance, which might drive the progress of solar energy conversion technologies.

在这项工作中，通过加载多孔硅（PSi）以增强光催化H _2的释放性能，在可见光响应gC ₃ N ₄光催化剂上构建了Z型异质结构。PSi负载量为2.50 wt％的合成Z方案gC ₃ N ₄ / PSi复合材料在870.4 µmol h ^-1  g ^-1时达到最高的光催化H ₂释放速率，约为纯gC的2倍。₃ N ₄，H ₂释放速率为427.2 µmol h ^-1  g ^-1。包括XRD，SEM，TEM，FTIR，XPS，UPS，PL和电化学方法在内的各种技术被用来证明gC ₃ N ₄ / PSi复合材料的成功构建，并研究了增强的光催化活性的起源。证实了在gC ₃ N ₄纳米片和PSi之间形成的异质结构是光催化活性增强的主要原因，这是由直接Z方案机理中光生电荷载流子的分离促进所致。这项研究提出了有前途的Z方案gC ₃ N ₄ / PSi光催化剂和有前途的H ₂ 进化性能，这可能会推动太阳能转换技术的进步。