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Effect of Al 2 O 3 -SiO 2 substrate on gas-sensing properties of TiO 2 based lambda sensor at high temperature
Ceramics International ( IF 5.1 ) Pub Date : 2018-02-01 , DOI: 10.1016/j.ceramint.2017.11.054
Maolin Zhang , Tao Ning , Peng Sun , Yangxi Yan , Dongyan Zhang , Zhimin Li

Abstract Alumina is widely used as substrate material for oxygen lambda sensors. It has been reported that response properties of sensors are highly dependent on surface state of substrates. In this work, Al 2 O 3 -x%SiO 2 (x = 2–30) substrates were specially prepared for TiO 2 based lambda sensors for high temperature operation. Structure and surface state of prepared substrates were characterized by XRD, SEM and XPS. TiO 2 sensing film was prepared by screen printing method. Results indicated that sensors fabricated on Al 2 O 3 -10%SiO 2 substrate exhibited the best sensing properties. Moreover, final steady-state voltages of all sensors were limited to less than 100 mV at 600–800 ℃.

中文翻译:

Al 2 O 3 -SiO 2 衬底对TiO 2 基λ传感器高温气敏性能的影响

摘要 氧化铝被广泛用作氧λ传感器的基板材料。据报道,传感器的响应特性高度依赖于基板的表面状态。在这项工作中,Al 2 O 3 -x%SiO 2 (x = 2–30) 衬底是专门为用于高温操作的基于 TiO 2 的λ传感器制备的。通过XRD、SEM和XPS对制备的基材的结构和表面状态进行表征。采用丝网印刷法制备TiO 2 传感薄膜。结果表明,在Al 2 O 3 -10%SiO 2 衬底上制造的传感器表现出最好的传感性能。此外,所有传感器的最终稳态电压都被限制在 600-800 ℃ 小于 100 mV。
更新日期:2018-02-01
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