Weak adhesion between anodic TiO₂ nanotube arrays (TNTAs) and Ti substrate is a nonnegligible obstacle for the preparation of long TNTAs and greatly limits its practical application. The TiN_xO_y nanoarrays prepared from TNTAs by a high-temperature nitridation process also suffer this defect. In this work, a compact layer (~ 140 nm in thickness) was introduced into the bottom of TNTAs via an additional anodization, resulting in firm binding between the Ti substrate and TNTAs. Owing to the strong adhesion, overlong TiN_xO_y nanoarrays up to 29.8 µm without curling can be obtained. Notably, the TiN_xO_y nanoarrays with average lengths of ~ 22.8 µm depict an extraordinary specific capacitance of 550.8 mF cm⁻² at 0.5 mA cm⁻² in 1.0 M H₂SO₄, which is the highest value of TiN_xO_y nanoarrays as reported so far. Moreover, TiN_xO_y/MnO₂, TiN_xO_y/Co-S and TiN_xO_y/MoS₂ nanoarrays were obtained. The loaded thin MnO₂ layer presents a superior specific capacitance of 1404.4 F g⁻¹ at 0.5 A g⁻¹ (95.5 mF cm⁻² at 0.5 mF cm⁻²). Flexible symmetric supercapacitor constructed by TiN_xO_y/MnO₂ nanoarrays can offer energy and power densities of 1.24 μWh cm⁻² and 9.14 mW cm⁻² at 30 mA cm⁻², respectively. Remarkably, the assembled TiN_xO_y/MnO₂ flexible supercapacitor achieves excellent cyclic stability with a retention of 93.88% over 10000 cycles. The obtained TiN_xO_y/Co-S nanoarrays can offer a specific capacitance of 358 mF cm⁻² at 0.5 mA cm⁻².

阳极TiO ₂纳米管阵列（TNTA）与Ti基体之间的弱附着力是制备长TNTA的不可忽视的障碍，并极大地限制了其实际应用。由TNTA通过高温氮化工艺制备的TiN _x O _y纳米阵列也存在该缺陷。在这项工作中，通过额外的阳极氧化将致密层（厚度约140 nm）引入TNTA的底部，从而在Ti衬底和TNTA之间形成牢固的结合。由于具有很强的附着力，可以获得长达29.8 µm的不卷曲的超长TiN _x O _y纳米阵列。值得注意的是，TiN _x O _y平均长度约为22.8 µm的纳米阵列在1.0 MH ₂ SO _4中在0.5 mA cm ^-2时具有550.8 mF cm ^-2的非凡比电容，这是迄今为止报道的TiN _x O _y纳米阵列的最高值。此外，获得了TiN _x O _y / MnO ₂，TiN _x O _y / Co-S和TiN _x O _y / MoS ₂纳米阵列。所装载的薄的MnO ₂层礼物1404.4 F G优异的比电容^-1在0.5 A克^-1（95.5厘米mF及其^-2 0.5μF的厘米^-2）。由TiN _x O _y / MnO ₂纳米阵列构成的柔性对称超级电容器在30 mA cm ^-2时可分别提供1.24μWhcm ^-2和9.14 mW cm ^-2的能量和功率密度。值得注意的是，组装好的TiN _x O _y / MnO ₂柔性超级电容器具有出色的循环稳定性，在10000次循环中的保留率为93.88％。所获得的TiN _x O _y / Co-S纳米阵列可以在0.5 mA cm ^{-2的条件下}提供358 mF cm ^-2的比电容。