Borosilicate glasses doped with PbSe quantum dots (QDs) were prepared by a conventional melt-quenching process followed by heat treatment, which exhibit good thermal, chemical and mechanical stabilities, and are amenable to fiber-drawing. A broad near infrared (NIR) photoluminescence (PL) emission (1070–1330 nm) band with large full-width-at-half-maximum (FWHM) values (189–266 nm) and notable Stokes shift (100–210 nm) was observed, which depended on the B2O3 concentration. The PL lifetime was about 1.42–2.44 μs, and it showed a clear decrease with increasing the QDs size. The planar [BO3] triangle units forming the two-dimensional (2D) glass network structure clearly increased with increasing B2O3 concentration, which could accelerate the movement of Pb2+ and Se2- ions and facilitate the growth of PbSe QDs. The tunable broadband NIR PL emission of the PbSe QD-doped borosilicate glass may find potential application in ultra-wideband fiber amplifiers. This article is protected by copyright. All rights reserved.

中文翻译：

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拓扑结构对PbSe量子点掺杂硼硅酸盐玻璃光致发光的影响

掺杂 PbSe 量子点 (QD) 的硼硅玻璃是通过传统的熔融淬火工艺和热处理制备的，具有良好的热、化学和机械稳定性，并且适合拉丝。一个宽的近红外 (NIR) 光致发光 (PL) 发射 (1070–1330 nm) 波段，具有大的半高全宽 (FWHM) 值 (189–266 nm) 和显着的斯托克斯位移 (100–210 nm)观察到，这取决于 B2O3 浓度。PL 寿命约为 1.42-2.44 μs，随着 QD 尺寸的增加，PL 寿命明显降低。形成二维（2D）玻璃网络结构的平面[BO3]三角形单元随着B2O3浓度的增加而明显增加，这可以加速Pb2+和Se2-离子的运动并促进PbSe QD的生长。PbSe QD 掺杂的硼硅玻璃的可调谐宽带 NIR PL 发射可能在超宽带光纤放大器中找到潜在的应用。本文受版权保护。版权所有。