2,2′‐(perfluoronaphthalene‐2,6‐diylidene)dimalononitrile (F6‐TCNNQ) is investigated as a molecular p‐type dopant in two hole‐transport materials, 2,2′,7,7′‐tetrakis(N,N‐diphenylamino)‐9,9‐spirobifluorene (Spiro‐TAD) and tris(4‐carbazoyl‐9‐ylphenyl)amine (TCTA). The electron affinity of F6‐TCNNQ is determined to be 5.60 eV, one of the strongest organic molecular oxidizing agents used to date in organic electronics. p‐Doping is found to be effective in Spiro‐TAD (ionization energy = 5.46 eV) but not in TCTA (ionization energy = 5.85 eV). Optical absorption measurements demonstrate that charge transfer is the predominant doping mechanism in Spiro‐TAD:F6‐TCNNQ. The host–dopant interaction also leads to a significant alteration of the host film morphology. Finally, transport measurements done on Spiro‐TAD:F6‐TCNNQ as a function of dopant concentration and temperature, and using a highly doped contact layer to ensure negligible hole injection barrier, lead to an accurate measurement of the film conductivity and hole‐hopping activation energy.

中文翻译：

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用于空穴传输材料的高电子亲和力分子掺杂剂F6-TCNNQ的研究

研究了2,2'-（全氟萘-2,6-二亚甲基）二甲基腈（F6-TCNNQ）作为分子p型掺杂剂在两种空穴传输材料2,2'，7,7'-四（N，ñ-二苯氨基）-9,9-螺二芴（Spiro-TAD）和三（4-咔唑基-9-基苯基）胺（TCTA）。F6-TCNNQ的电子亲和力确定为5.60 eV，这是迄今为止在有机电子产品中使用的最强的有机分子氧化剂之一。发现p掺杂在Spiro-TAD（电离能= 5.46 eV）中有效，但在TCTA（电离能= 5.85 eV）中无效。光吸收测量表明，电荷转移是Spiro-TAD：F6-TCNNQ中的主要掺杂机制。宿主-掺杂剂的相互作用也导致宿主膜形态的显着改变。最后，在Spiro-TAD：F6-TCNNQ上进行的传输测量是掺杂剂浓度和温度的函数，并使用高掺杂接触层来确保空穴注入势垒可忽略不计，