Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μm,Applied Physics Letters

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Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μm
Applied Physics Letters ( IF 3.5 ) Pub Date : 2017-11-06 , DOI: 10.1063/1.4996966
S. V. Morozov _{1,

2} , V. V. Rumyantsev _{1,

2} , M. A. Fadeev ₁ , M. S. Zholudev ₁ , K. E. Kudryavtsev _{1,

2} , A. V. Antonov _{1,

2} , A. M. Kadykov _{1,

3} , A. A. Dubinov _{1,

2} , N. N. Mikhailov _{4,

5} , S. A. Dvoretsky ₄ , V. I. Gavrilenko _{1,

2}

Affiliation

We report on stimulated emission at wavelengths up to 19.5 μm from HgTe/HgCdTe quantum well heterostructures with wide‐gap HgCdTe dielectric waveguide, grown by molecular beam epitaxy on GaAs(013) substrates. The mitigation of Auger processes in structures under study is exemplified, and the promising routes towards the 20–50 μm wavelength range, where HgCdTe lasers may be competitive to the prominent emitters, are discussed.

中文翻译：

来自 HgCdTe 量子阱异质结构的受激发射，波长高达 19.5 μm

我们报告了来自具有宽间隙 HgCdTe 介电波导的 HgTe/HgCdTe 量子阱异质结构在波长高达 19.5 μm 的受激发射，该异质结构通过分子束外延在 GaAs(013) 衬底上生长。举例说明了正在研究的结构中俄歇过程的缓解，并讨论了朝向 20-50 μm 波长范围的有希望的路线，其中 HgCdTe 激光器可能与突出的发射器竞争。

更新日期：2017-11-06

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