Nanoparticles (NPs) of vanadium dioxide (VO2) in the metal state exhibit localized surface plasmon resonance (LSPR) at 1200–1600 nm, which fills the gap between the absorption ranges of silicon and the LSPR of conventional transparent conductor NPs (ZnO:Al, In2O3:Sn, etc.). However, two issues of the lithographic process for NP formation and the metal-insulator transition temperature (69 °C) higher than room temperature have made it difficult to use VO2 NPs for applications such as energy conversion devices, near infrared (NIR) light detectors, and bio-therapy. In this study, we developed a self-growing process for tungsten (W)-doped VO2 NPs that are in the metal state at room temperature, using sputter deposition and post-lamp annealing. The changes in the LSPR peak wavelengths with the NP size were well controlled by changing the deposited film thickness and oxygen pressure during the post-annealing treatment. The presented results resolve the difficulties of using the metal-insulator transition materia...

中文翻译：

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自生长掺钨 VO2 纳米粒子在室温下的近红外局域表面等离子体共振

金属态二氧化钒 (VO2) 纳米粒子 (NPs) 在 1200-1600 nm 处表现出局域表面等离子体共振 (LSPR)，填补了硅的吸收范围与传统透明导体 NPs (ZnO:Al , In2O3:Sn 等）。然而，NP形成的光刻工艺和高于室温的金属-绝缘体转变温度（69°C）的两个问题使得VO2 NP难以用于能量转换设备、近红外（NIR）光探测器等应用，和生物疗法。在这项研究中，我们使用溅射沉积和灯后退火开发了一种自生长工艺，用于在室温下处于金属状态的钨 (W) 掺杂的 VO2 NP。通过在后退火处理期间改变沉积膜厚度和氧气压力，可以很好地控制 LSPR 峰值波长随 NP 尺寸的变化。所呈现的结果解决了使用金属-绝缘体过渡材料的困难...