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The fabrication of the ultra-thin polyvinylidene fluoride dielectric films for nanoscale high energy density capacitors
Polymer ( IF 4.1 ) Pub Date : 2017-11-03 , DOI: 10.1016/j.polymer.2017.11.002
Xiong Xie , Mengbin Zhou , Luqiang Lv , Shuangyi Liu , Jun Shen

Nanoscale polymer dielectric films are critical demanded by continuously integration and miniaturization of energy electronic devices. In this paper, PVDF films are fabricated by present developed HSCA-LBD method, and thus, the dielectric properties of PVDF films with nanoscale thickness are investigated in detail for the first time. The results show that the films with thickness lower than 100 nm present excellent dielectric performances, the effective dielectric constant is up to 15 with loss less than 0.1 in frequency range of 1K - 2 MHz. The breakdown field of them is up to 171 MV/m with the energy density up to 2 J/cm3, which are in same level with those of reported PVDF films with thickness higher than 10 μm. Moreover, the mechanisms of dielectric behaviors are also discussed in detail.



中文翻译:

用于纳米级高能量密度电容器的超薄聚偏二氟乙烯介电膜的制备

纳米级聚合物介电膜是能源电子设备不断集成和小型化的关键要求。本文采用目前开发的HSCA-LBD方法制备PVDF薄膜,从而首次对具有纳米级厚度的PVDF薄膜的介电性能进行了详细的研究。结果表明,厚度小于100 nm的薄膜具有出色的介电性能,在1K-2 MHz的频率范围内,有效介电常数高达15,损耗小于0.1。它们的击穿场高达171 MV / m,能量密度高达2 J / cm 3,与报道的厚度大于10μm的PVDF膜的击穿场处于同一水平。此外,还详细讨论了介电行为的机理。

更新日期:2017-11-03
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