We report the mode-locked operation of an AlGaInP-based semiconductor disk laser without a saturable absorber. The active region containing 20 GaInP quantum wells is used in a linear cavity with a curved outcoupling mirror. The gain chip is optically pumped by a 532 nm laser, and mode-locking is achieved by carefully adjusting the pump spot size. For a pump power of 6.8 W, an average output power of up to 30 mW is reached at a laser wavelength of 666 nm. The pulsed emission is characterized using a fast oscilloscope and a spectrum analyzer, demonstrating stable single-pulse operation at a repetition rate of 3.5 GHz. Intensity autocorrelation measurements reveal a FWHM pulse duration of 22 ps with an additional coherence peak on top, indicating noise-like pulses. The frequency spectrum, as well as the Gaussian beam profile and the measured beam propagation factor below 1.1, shows no influence of higher order transverse modes contributing to the mode-locked operation.We report the mode-locked operation of an AlGaInP-based semiconductor disk laser without a saturable absorber. The active region containing 20 GaInP quantum wells is used in a linear cavity with a curved outcoupling mirror. The gain chip is optically pumped by a 532 nm laser, and mode-locking is achieved by carefully adjusting the pump spot size. For a pump power of 6.8 W, an average output power of up to 30 mW is reached at a laser wavelength of 666 nm. The pulsed emission is characterized using a fast oscilloscope and a spectrum analyzer, demonstrating stable single-pulse operation at a repetition rate of 3.5 GHz. Intensity autocorrelation measurements reveal a FWHM pulse duration of 22 ps with an additional coherence peak on top, indicating noise-like pulses. The frequency spectrum, as well as the Gaussian beam profile and the measured beam propagation factor below 1.1, shows no influence of higher order transverse modes contributing to the mode-locked operation.

中文翻译：

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自锁模AlGaInP-VECSEL

我们报告了没有可饱和吸收体的基于 AlGaInP 的半导体盘式激光器的锁模操作。包含 20 个 GaInP 量子阱的有源区用于带有弯曲外耦合镜的线性腔中。增益芯片由 532 nm 激光器光泵浦，通过仔细调整泵浦光斑尺寸实现锁模。对于 6.8 W 的泵浦功率，在 666 nm 的激光波长下可达到高达 30 mW 的平均输出功率。脉冲发射使用快速示波器和频谱分析仪进行表征，展示了在 3.5 GHz 重复率下稳定的单脉冲操作。强度自相关测量显示 FWHM 脉冲持续时间为 22 ps，顶部有一个额外的相干峰值，表示类似噪声的脉冲。频谱，以及高斯光束轮廓和低于 1.1 的测量光束传播因子，表明对锁模操作有贡献的高阶横模没有影响。 我们报告了基于 AlGaInP 的半导体盘式激光器的锁模操作，没有可饱和吸收器。包含 20 个 GaInP 量子阱的有源区用于带有弯曲外耦合镜的线性腔中。增益芯片由 532 nm 激光器光泵浦，通过仔细调整泵浦光斑尺寸实现锁模。对于 6.8 W 的泵浦功率，在 666 nm 的激光波长下可达到高达 30 mW 的平均输出功率。脉冲发射使用快速示波器和频谱分析仪进行表征，展示了在 3.5 GHz 重复率下稳定的单脉冲操作。强度自相关测量显示 FWHM 脉冲持续时间为 22 ps，顶部有一个额外的相干峰值，表示类似噪声的脉冲。频谱以及高斯光束轮廓和测量的光束传播因子低于 1.1，显示对锁模操作有贡献的高阶横向模式没有影响。