H-Center and V-Center Defects in Hybrid Halide Perovskites,ACS Energy Letters

当前位置： X-MOL 学术 › ACS Energy Lett. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

H-Center and V-Center Defects in Hybrid Halide Perovskites
ACS Energy Letters ( IF 19.3 ) Pub Date : 2017-11-03 00:00:00 , DOI: 10.1021/acsenergylett.7b00995
Lucy D. Whalley ₁ , Rachel Crespo-Otero ₂ , Aron Walsh _{1,

3}

Affiliation

The self-trapping of holes with the formation of a molecular X₂^– anion is a well-established process in metal halide (MX) crystals, but V-center (2X^– + h⁺ → X₂^–) and H-center (X^– + X_i^– + h⁺ → X₂^–) defects have not yet been confirmed in halide perovskite semiconductors. The I₂^– split-interstitial defect is predicted to be a spin radical in CH₃NH₃PbI₃ with an optically excited state in the semiconductor band gap.

中文翻译：

混合卤化物钙钛矿中的H-Center和V-Center缺陷

的与分子X的形成孔的自陷₂^-阴离子中的金属卤化物（MX）晶体，但是V-中心一个完善的处理（2X ^- + H ⁺ →X ₂^{- ）}和H-中心（ X ^– + X _i^– + h ⁺ →X ₂^–）缺陷尚未在卤化物钙钛矿半导体中得到确认。I ₂^–裂隙缺陷预计为CH ₃ NH ₃ PbI _3中的自旋自由基，在半导体带隙中具有光激发态。

更新日期：2017-11-05

点击分享查看原文

点击收藏

公开下载

阅读更多本刊最新论文本刊介绍/投稿指南11