Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a “source” and a well separated “drain.” The next generation electronics may operate on the spin of carriers in addition to their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the predicted long electron spin lifetime at room temperature. In this letter, we demonstrate injection of pure spin currents (i.e., with no associated transport of electric charges) in germanium, combined with non-local spin detection at 10 K and room temperature. For this purpose, we used a lateral spin valve with epitaxially grown magnetic tunnel junctions as spin injector and spin detector. The non-local magnetoresistance signal is clearly visible and reaches ≈15 mΩ at room temperature. The electron sp...

中文翻译：

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室温下锗的非局域电自旋注入和检测

非本地载流子注入/检测方案是集成系统中信息处理的基础。这种范式包括用外部信号控制电荷载流子在“源”和分离良好的“漏”之间流动的通道。除了电荷之外，下一代电子器件还可以在载流子的自旋上运行，而锗似乎是开发此类平台的最佳宿主材料，因为它与主流硅技术兼容，并且预计在室温下电子自旋寿命长。在这封信中，我们展示了在锗中注入纯自旋电流（即没有相关的电荷传输），并结合 10 K 和室温下的非局部自旋检测。以此目的，我们使用具有外延生长的磁性隧道结的横向自旋阀作为自旋注入器和自旋检测器。非局部磁阻信号清晰可见，在室温下达到 ≈15 mΩ。电子喷...