The interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr2O3 (0001) surfaces has been investigated. Electrostatic force microscopy and Kelvin probe force microscopy studies point to hole doping of few-layer graphene, with up to a 150 meV shift in the Fermi level, an aspect that is confirmed by Raman spectroscopy. Density functional theory calculations furthermore confirm the p-type nature of the graphene/chromia interface and suggest that the chromia is able to induce a significant carrier spin polarization in the graphene layer. A large magnetoelectrically controlled magneto-resistance can therefore be anticipated in transistor structures based on this system, a finding important for developing graphene-based spintronic applications.

中文翻译：

---

走向磁电石墨烯晶体管

已经研究了机械剥离的少层石墨烯和 Cr2O3 (0001) 表面之间的界面电荷转移。静电力显微镜和开尔文探针力显微镜研究表明，几层石墨烯的空穴掺杂，在费米能级上有高达 150 meV 的偏移，拉曼光谱证实了这一方面。密度泛函理论计算进一步证实了石墨烯/氧化铬界面的 p 型性质，并表明氧化铬能够在石墨烯层中引起显着的载流子自旋极化。因此，可以在基于该系统的晶体管结构中预期大的磁电控制磁阻，这一发现对于开发基于石墨烯的自旋电子应用很重要。