Epitaxial thin films of MnxGa1−x (x = 0.70, 0.74) grown on single crystal (LaAlO3)0.3(Sr2TaAlO6)0.7 [LSAT] substrates exhibit an enhanced magnetic moment and magnetic anisotropy in comparison to films of the same composition grown epitaxially on SrTiO3 [STO] single crystal substrates. Atomic and magnetic force microscopy revealed films exhibiting uniform grains and magnetic domain structures, with only minor differences between the films grown on different substrates. High resolution transmission electron microscopy on the x = 0.74 sample grown on LSAT showed a well-ordered, faceted film structure with the tetragonal c-axis oriented out of the film plane. Further, misfit dislocations, accommodating the lattice mismatch, were evidenced at the film/substrate interface. The out of plane c lattice parameter is larger for all x in the films grown on LSAT, due to the smaller substrate lattice parameter compared to STO. The increase in c generates a larger distortion of the tetragonal lattice which promotes the ...

中文翻译：

---

在 LSAT 上生长的 Mn-Ga 薄膜中增强的磁化强度和各向异性

与在 SrTiO3 上外延生长的相同成分的薄膜相比，在单晶 (LaAlO3)0.3(Sr2TaAlO6)0.7 [LSAT] 衬底上生长的 MnxGa1−x (x = 0.70, 0.74) 外延薄膜表现出增强的磁矩和磁各向异性[STO] 单晶衬底。原子力和磁力显微镜显示薄膜表现出均匀的晶粒和磁畴结构，在不同基板上生长的薄膜之间只有很小的差异。在 LSAT 上生长的 x = 0.74 样品上的高分辨率透射电子显微镜显示出有序的多面薄膜结构，其中四方 c 轴定向在薄膜平面之外。此外，适应晶格失配的错配位错在膜/衬底界面处得到证实。由于与 STO 相比，衬底晶格参数更小，因此在 LSAT 上生长的薄膜中的所有 x 的面外 c 晶格参数都更大。c 的增加会产生更大的四方晶格畸变，从而促进...