Antiferroelectric (AFE) HfO2 and ZrO2 based thin films are promising for energy and low power computing related applications. Here, we investigate 10 nm thin AFE Si:HfO2 films by means of first-order reversal curves (FORCs). Polarization-voltage, capacitance-voltage, and X-ray diffraction measurements confirm typical AFE behavior originating from the tetragonal phase. FORC analysis reveals two oppositely biased switching density peaks with a narrow distribution of coercive fields around 0.23 MV/cm, which is at least 4 times lower than that in typical ferroelectric HfO2 and ZrO2 films. The distributions along the internal bias field axis are much broader compared to the distribution of coercive fields. The exceptional stability of the switching density magnitude and coercive fields for up to 108 electric field cycles is demonstrated. Only small reductions of the internal bias fields are observed with cycling. These results highlight pathways towards improved cycling stability and variability of ferroelectr...

中文翻译：

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从一阶反转曲线洞察反铁电

反铁电 (AFE) HfO2 和 ZrO2 基薄膜有望用于能源和低功耗计算相关应用。在这里，我们通过一阶反转曲线 (FORC) 研究了 10 nm 薄的 AFE Si:HfO2 薄膜。极化电压、电容电压和 X 射线衍射测量证实了源自四方相的典型 AFE 行为。FORC 分析揭示了两个相反偏置的开关密度峰值，矫顽场分布较窄，约为 0.23 MV/cm，比典型的铁电 HfO2 和 ZrO2 薄膜至少低 4 倍。与矫顽场的分布相比，沿内部偏置场轴的分布要宽得多。证明了高达 108 个电场周期的开关密度幅度和矫顽场的卓越稳定性。循环时仅观察到内部偏置场的小幅减少。这些结果突出了提高铁电循环稳定性和可变性的途径……