Future flexible electronic systems require memory devices combining low-power operation and mechanical bendability. However, high programming/erasing voltages, which are universally needed to switch the storage states in previously reported ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memories (NVMs), severely prevent their practical applications. In this work, we develop a route to achieve a low-voltage operating flexible Fe-OFET NVM. Utilizing vertical phase separation, an ultrathin self-organized poly(styrene) (PS) buffering layer covers the surface of the ferroelectric polymer layer by one-step spin-coating from their blending solution. The ferroelectric polymer with a low coercive field contributes to low-voltage operation in the Fe-OFET NVM. The polymer PS contributes to the improvement of mobility, attributing to screening the charge scattering and decreasing the surface roughness. As a result, a high performance flexible Fe-OFET NVM is achieved at the low P/E voltages of ±10...

中文翻译：

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具有垂直相分离 P(VDF-TrFE-CTFE)/PS 电介质的低压操作柔性铁电有机场效应晶体管非易失性存储器

未来的柔性电子系统需要结合低功耗操作和机械弯曲性的存储设备。然而，在先前报道的铁电有机场效应晶体管 (Fe-OFET) 非易失性存储器 (NVM) 中，通常需要高编程/擦除电压来切换存储状态，这严重阻碍了它们的实际应用。在这项工作中，我们开发了一种实现低电压操作灵活 Fe-OFET NVM 的途径。利用垂直相分离，超薄的自组织聚（苯乙烯）（PS）缓冲层通过从其混合溶液中一步旋涂覆盖铁电聚合物层的表面。具有低矫顽场的铁电聚合物有助于 Fe-OFET NVM 的低电压运行。聚合物PS有助于提高流动性，归因于屏蔽电荷散射和降低表面粗糙度。因此，在 ±10... 的低 P/E 电压下实现了高性能柔性 Fe-OFET NVM。