We optimized the diameter and microgeometry of preformed conductive filaments (CFs) to improve the switching reliability of copper/nanoporous amorphous carbon (a-C)/platinum memory devices. Forming-free devices were obtained because of the introduction of preformed CFs into the nanoporous layer during the copper electrode evaporation process. The switching fluctuation decreased with the increasing preformed CF size in a certain range; however, the device with stronger preformed CFs suffered from high current in the first RESET process. Furthermore, to achieve both high switching uniformity and low power consumption, a dual-layer structure was proposed to regulate the microgeometry of preformed CFs. Compared with those of a pristine device and single-layer nanoporous device, the fluctuation of high/low resistance values was further suppressed to 26% and 21%, respectively. In addition, Resistive random access memory (RRAM) devices exhibited a fast switching speed ( 105 cycles),...

中文翻译：

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通过使用双层纳米多孔碳结构提高电阻开关可靠性

我们优化了预制导电丝 (CF) 的直径和微观几何形状，以提高铜/纳米多孔非晶碳 (aC)/铂存储器件的开关可靠性。由于在铜电极蒸发过程中将预成型的 CF 引入纳米多孔层，因此获得了无成型器件。在一定范围内，随着预制CF尺寸的增加，开关波动减小；然而，具有更强预制 CF 的器件在第一次 RESET 过程中遭受高电流。此外，为了实现高开关均匀性和低功耗，提出了一种双层结构来调节预制 CF 的微观几何形状。与原始器件和单层纳米多孔器件相比，高/低电阻值的波动分别进一步抑制到26%和21%。此外，电阻式随机存取存储器 (RRAM) 器件表现出快速的开关速度（105 个周期），...