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Measurement of subcell depletion layer capacitances in multijunction solar cells
Applied Physics Letters ( IF 3.5 ) Pub Date : 2017-10-30 , DOI: 10.1063/1.4998148
M. Rutzinger 1, 2 , M. Salzberger 1, 2 , A. Gerhard 1 , H. Nesswetter 1 , P. Lugli 3 , C. G. Zimmermann 1
Affiliation  

A method for measuring subcell capacitance voltage (C–V) in a multijunction solar cell is introduced. The subcell of interest is illuminated by a monochromatic light pulse with a ns rise time. The subcell capacitance is calculated from the measured rise time of the solar cell voltage. The effect of optical coupling is eliminated by introducing a high intensity bias illumination to all subcells below the one measured. The method is verified by comparing the subcell capacitance obtained from four junction solar cells with the results from corresponding component cells, which can be measured using well-established methods. From the C–V curves, the built-in voltage and the base layer doping density for each subcell are calculated.

中文翻译:

多结太阳能电池中子电池耗尽层电容的测量

介绍了一种测量多结太阳能电池中子电池电容电压 (C-V) 的方法。感兴趣的子细胞被具有 ns 上升时间的单色光脉冲照亮。子电池电容是根据太阳能电池电压的测量上升时间计算得出的。通过向低于测量值的所有子细胞引入高强度偏置照明,消除了光耦合的影响。通过比较从四个结太阳能电池获得的子电池电容与来自相应组件电池的结果来验证该方法,这可以使用完善的方法进行测量。根据 C-V 曲线,计算每个子电池的内置电压和基层掺杂密度。
更新日期:2017-10-30
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