Organic semiconductor materials with high charge‐carrier mobility and high luminescence are promising for fabricating high‐performance organic light‐emitting transistors and electrically pumped organic laser diodes. Some derivatives with an anthracene core show both characteristics; however, independently controlling the size and the thickness of single‐crystal films is challenging. Here, 2D and 3D crystal formation is demonstrated by using an air‐stable organic semiconductor, 2,6‐bis[4‐ethylphenyl]anthracene (BEPAnt). The shape of the single‐crystal films can be changed from about 0.10 mm in diameter and 400 nm in thickness to 1.0 mm in diameter and 50 nm in thickness by controlling the growth conditions using saturation–supersaturation vapor pressure curves. The in‐plane growth rate increases by ten times while the out‐of‐plane growth rate decreases to about 1/8 as the growth temperature increases from 210 to 250 °C. Single‐crystal organic field‐effect transistors based on BEPAnt show isotropic mobilities as high as 7.2 cm² V⁻¹ s⁻¹.

中文翻译：

---

各向同性高载流子迁移率的2,6-双[4-乙基苯基]蒽的二维和3D晶体形成

具有高载流子迁移率和高发光度的有机半导体材料有望用于制造高性能有机发光晶体管和电泵浦有机激光二极管。一些具有蒽核心的衍生物显示出两个特征。然而，独立控制单晶膜的尺寸和厚度是具有挑战性的。在这里，通过使用空气稳定的有机半导体2,6-双[4-乙基苯基]蒽（BEPAnt）证明了2D和3D晶体的形成。通过使用饱和-过饱和蒸气压曲线控制生长条件，可以将单晶膜的形状从直径约0.10 mm和厚度400 nm更改为直径1.0 mm和厚度50 nm。随着生长温度从210°C升高到250°C，平面内生长速率增加了十倍，而平面外生长速率降低到大约1/8。基于BEPAnt的单晶有机场效应晶体管显示出高达7.2 cm的各向同性迁移率² V ^-1 s ^-1。