High-Performance Photoelectronic Sensor Using Mesostructured ZnO Nanowires,ACS Sensors

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High-Performance Photoelectronic Sensor Using Mesostructured ZnO Nanowires
ACS Sensors ( IF 8.2 ) Pub Date : 2017-10-25 00:00:00 , DOI: 10.1021/acssensors.7b00477
Liping Chen ₁ , Jiabao Cui ₂ , Xia Sheng ₁ , Tengfeng Xie ₂ , Tao Xu ₃ , Xinjian Feng ₁

Affiliation

Semiconductor photoelectrodes that simultaneously possess rapid charge transport and high surface area are highly desirable for efficient charge generation and collection in photoelectrochemical devices. Herein, we report mesostructured ZnO nanowires (NWs) that not only demonstrate a surface area as high as 50.7 m²/g, comparable to that of conventional nanoparticles (NPs), but also exhibit a 100 times faster electron transport rate than that in NP films. Moreover, using the comparison between NWs and NPs as an exploratory platform, we show that the synergistic effect between rapid charge transport and high surface area leads to a high performance photoelectronic formaldehyde sensor that exhibits a detection limit of as low as 5 ppb and a response of 1223% (at 10 ppm), which are, respectively, over 100 times lower and 20 times higher than those of conventional NPs-based device. Our work establishes a foundational pathway toward a better photoelectronic system by materials design.

中文翻译：

使用介电结构ZnO纳米线的高性能光电传感器

同时具有快速电荷传输和高表面积的半导体光电极对于在光电化学装置中有效地产生电荷和收集电荷是非常需要的。在此，我们报道了介孔结构的ZnO纳米线（NWs），不仅显示了高达50.7 m ²的表面积/ g，与常规纳米颗粒（NPs）相当，但电子传输速率也比NP薄膜快100倍。此外，使用NWs和NPs之间的比较作为探索性平台，我们表明快速电荷传输和高表面积之间的协同效应导致了高性能的光电甲醛传感器，其检测限低至5 ppb和响应相对于传统的基于NP的设备而言，它们的性能降低了1223％（在10 ppm时），分别降低了100倍以上和20倍以上。我们的工作通过材料设计建立了通往更好的光电系统的基本途径。

更新日期：2017-10-25

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