Abstract In order to get a physical/chemical insight into the formation of nanoscale semiconductor heterojunctions, MoS2 flakes are deposited on the silicon nanowire (SiNW) array by chemical vapor deposition (CVD). In this study, H2O2 treatment provides a favorable place where the formation of Si O bonds on the SiNW surfaces that play important roles (i.e., the nucleation centers, catalyst control centers or “seeds”) can dominate the growth of MoS2 on the SiNWs. Using this configuration, the effect of a change in the S/MoO3 mass ratio (MS/MMoO3) on the surface morphology of MoS2 is studied. It is shown that an increase in the value of MS/MMoO3 leads to the increased nucleation rate, increasing the size of MoS2 nanopetals. This study provides valuable scientific information for directly CVD-grown edge-oriented MoS2/SiNWs heterojunctions for various nanoscale applications, including hydrogen evolution reaction and electronic and optoelectronic devices.

中文翻译：

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使用化学气相沉积方法在硅纳米线阵列上控制 MoS 2 纳米花瓣的生长

摘要 为了从物理/化学角度深入了解纳米级半导体异质结的形成，通过化学气相沉积 (CVD) 在硅纳米线 (SiNW) 阵列上沉积 MoS2 薄片。在这项研究中，H2O2 处理提供了一个有利的地方，在其中发挥重要作用的 SiNW 表面（即成核中心、催化剂控制中心或“种子”）上形成的 Si O 键可以主导 MoS2 在 SiNW 上的生长。使用这种配置，研究了 S/MoO3 质量比 (MS/MMoO3) 的变化对 MoS2 表面形态的影响。结果表明，MS/MMoO3 值的增加导致成核速率增加，增加了 MoS2 纳米花瓣的尺寸。