Field‐effect transistors with ionic‐liquid gating (ILG) have been widely employed and have led to numerous intriguing phenomena in the last decade, due to the associated excellent carrier‐density tunability. However, the role of the electrochemical effect during ILG has become a heavily debated topic recently. Herein, using ILG, a field‐induced insulator‐to‐metal transition is achieved in WO₃ thin films with the emergence of structural transformations of the whole films. The subsequent secondary‐ion mass spectrometry study provides solid evidence that electrochemically driven hydrogen evolution dominates the discovered electrical and structural transformation through surface absorption and bulk intercalation.

中文翻译：

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通过氢析出在WO3薄膜中进行电场控制的相变

带有离子液体门控（ILG）的场效应晶体管由于具有出色的载流子密度可调性，在过去的十年中已引起广泛的关注。然而，最近在ILG中电化学效应的作用已成为一个备受争议的话题。在本文中，使用ILG，随着整个薄膜的结构转变的出现，在WO ₃薄膜中实现了场致绝缘体到金属的转变。随后的二次离子质谱研究提供了有力的证据，表明电化学驱动的氢逸出通过表面吸收和本体插层主导了已发现的电和结构转变。